SD1224 Microchip

- - - SD1224 RF AND MICROWAVE TRA NSISTORS VHF FM APPLICATIONS FeaturesFeatures 28 VOLTS P G P DESCRIPTION: The SD1224 is an epitaxial silicon NPN planar transistor designed primarily for 28 V FM Class C RF amplifiers utilized in ground stat ion transmitters. This device utilizes ballasted emitter resistors and improved metallization systems to achieve optimum load mismatch capability. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Parameter Unit V Collector - V CBO V Collector - V CEO V - V EBO I A C P Power Dissipation W DISS T Junction Temperature C J T - C STG THERMAL DATA R Junction - C/ W TH(j - c) or contact our factory direct. WWW.ADVANCEDPOWER.COM Visit our website at Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein 2.9 Case Thermal Resistance 65 to +150 Storage Temperature +200 60 5.0 Device Current 4.0 Base Voltage Emitter 35 Emitter Voltage 65 Base Voltage Value Symbol = 7.6 dB GAIN OUT = 40 W MIN. EFFICIENCY 60% MIN. COMMON EMITTER CLASS C 175 MHz 9855 FAX: (215) 631 9840 PHONE: (215) 631 1013 18936 MONTGOMERYVILLE, PA 140 COMMERCE DRIVE SD1224 ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25C)C) STATIC Units Min. Max. I I V CBO C B I V = 0 V V CES C BE I I V CEO C B I = I V EBO E C I V = 30 V I CE E CES V = 30 V I 1 I CBO CB E h V = 5 V I 5 FE CE C DYNAMIC Units Min. Max. P f = 175 MHz P = 7.0 W V = 28 V W OUT IN CE G f = 175 MH z P = 7.0 W V = 28 V dB P IN CE f = 175 MHz P = 7.0 W V = 28 V % C IN CE C f = 1 MHz V = 30 V pF OB CB IMPEDANCE DATAIMPEDANCE DATA Z ( ) Z ( ) P (W) P (W) IN IN OUT 0.85 + j 1.20 3.25 + j 7.05 1.02 + j 1.32 4.45 + j 5.40 1.01 + 5.25 + j 4.42 1.05 + j 1.35 5.45 + j 4.12 V or contact our factory direct. WWW.ADVANCEDPOWER.COM Visit our website at Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein f = 175 MHz CE = 28 V Test Conditions: 60.5 8.0 j 1.42 53.0 6.0 43.0 4.0 28.5 2.0 CL 65 60 7.6 40 Typ. Test Conditions Symbol Value 200 = 500 mA mA = 0 mA = 0 mA mA 10 4.0 = 0 mA 10 mA BV 35 = 0 mA = 200 mA BV 65 = 200 mA BV 65 = 0 mA = 10 mA BV Typ. Test Conditions Symbol Value