A Business Partner of Renesas Electronics Corporation. Preliminary JEITA NE662M04 / 2SC5508 Part No. Data Sheet NPN SILICON RF TRANSISTOR R09DS0055EJ0200 FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION Rev.2.00 Mar 5, 2013 FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES Ideal for low-noise, high-gain amplification applications NF = 1.1 dB TYP., G = 16 dB TYP. V = 2 V, I = 5 mA, f = 2 GHz a CE C Maximum available power gain: MAG = 19 dB TYP. V = 2 V, I = 20 mA, f = 2 GHz CE C f = 25 GHz technology adopted T Flat-lead 4-pin thin-type super minimold (M04) package <R> ORDERING INFORMATION Part Number Order Number Quantity Package Supplying Form Flat-lead 4-pin 8 mm wide embossed taping 50 pcs (Non reel) NE662M04 NE662M04-A 2SC5508 2SC5508-A thin-type super Pin 1 (Emitter), Pin 2 (Collector) face minimold (M04) the perforation side of the tape NE662M04-T2 NE662M04-T2-A 3 kpcs/reel (Pb-Free) 2SC5508-T2 2SC5508-T2-A NE662M04-T2B NE662M04-T2B-A 15 kpcs/reel 2SC5508-T2B 2SC5508-T2B-A Remark To order evaluation samples, please contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (T = 25C) C Parameter Symbol Ratings Unit Collector to Base Voltage V 15 V CBO Collector to Emitter Voltage V 3.3 V CEO Emitter to Base Voltage V 1.5 V EBO Collector Current I 35 mA C Note Total Power Dissipation P 115 mW tot Junction Temperature T 150 C j Storage Temperature T 65 to +150 C stg Note Free air. THERMAL RESISTANCE Parameter Symbol Ratings Unit Junction to Case Resistance R 150 C /W th j-c Junction to Ambient Resistance R 650 C /W th j-a CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an<R in the PDF file and specifying it in theFind what field. R09DS0055EJ0200 Rev.2.00 Page 1 of 8 Mar 5, 2013 PHASE-OUTA Business Partner of Renesas Electronics Corporation. NE662M04 / 2SC5508 Chapter Title ELECTRICAL CHARACTERISTICS (T = +25 C) A Parameter Symbol Conditions MIN. TYP. MAX.Unit DC Characteristics Collector Cut-off Current I V = 5 V, I = 0 200 nA CBO CB E Emitter Cut-off Current I V = 1 V, I = 0 200 nA EBO EB C Note 1 DC Current Gain h V = 2 V, I = 5 mA 50 70 100 FE CE C RF Characteristics Gain Bandwidth Product f V = 3 V, I = 30 mA, f = 2 GHz 20 25 GHz T CE C 2 Insertion Power Gain S V = 2 V, I = 20 mA, f = 2 GHz 14 17 dB 21e CE C Noise Figure NF V = 2 V, I = 5 mA, f = 2 GHz, 1.1 1.5 dB CE C Z = Z S opt Note 2 Reverse Transfer Capacitance C V = 2 V, I = 0, f = 1 MHz 0.18 0.24 pF re CB E Note 3 Maximum Available Power Gain MAG V = 2 V, I = 20 mA, f = 2 GHz 19 dB CE C Note 4 Maximum Stable Power Gain MSG V = 2 V, I = 20 mA, f = 2 GHz 20 dB CE C Note 5 Gain 1 dB Compression Output P V = 2 V, I = 20 mA , f = 2 GHz 11 dBm O (1 dB) CE C Power Note 5 3rd Order Intermodulation OIP V = 2 V, I = 20 mA , f = 2 GHz 22 dBm 3 CE C Distortion Output Intercept Point Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded S21 2 3. MAG = (K (K 1) ) S12 S21 4. MSG = S12 5. Collector current when P is output O (1 dB) h CLASSIFICATION FE Rank FB/YFB Marking T79 h Value 50 to 100 FE R09DS0055EJ0200 Rev.2.00 Page 2 of 8 Mar 5, 2013 PHASE-OUT