A Business Partner of Renesas Electronics Corporation. Preliminary JEITA NE663M04 / 2SC5509 Data Sheet Part No. NPN SILICON RF TRANSISTOR R09DS0056EJ0300 FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION Rev.3.00 Mar 5, 2013 FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES Ideal for medium output power amplification NF = 1.2 dB TYP., G = 12 dB TYP. V = 2 V, I = 10 mA, f = 2 GHz a CE C Maximum available power gain: MAG = 14 dB TYP. V = 2 V, I = 50 mA, f = 2 GHz CE C f = 25 GHz technology adopted T Flat-lead 4-pin thin-type super minimold (M04) package <R> ORDERING INFORMATION Part Number Order Number Quantity Package Supplying Form NE663M04 NE663M04-A 50 pcs (Non reel) Flat-lead 4-pin 8 mm wide embossed taping 2SC5509 2SC5509-A thin-type super Pin 1 (Emitter), Pin 2 (Collector) face minimold (M04) NE663M04-T2 NE663M04-T2-A 3 kpcs/reel the perforation side of the tape 2SC5509-T2 2SC5509-T2-A (Pb-Free) Remark To order evaluation samples, please contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (T = 25C) C Parameter Symbol Ratings Unit Collector to Base Voltage V 15 V CBO Collector to Emitter Voltage V 3.3 V CEO Emitter to Base Voltage V 1.5 V EBO Collector Current I 100 mA C Note Total Power Dissipation P 190 mW tot Junction Temperature T 150 C j Storage Temperature T 65 to +150 C stg Note Free air. THERMAL RESISTANCE Parameter Symbol Ratings Unit Junction to Case Resistance R 95 C /W th j-c Junction to Ambient Resistance R 650 C /W th j-a CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an<R in the PDF file and specifying it in theFind what field. R09DS0056EJ0300 Rev.3.00 Page 1 of 8 Mar 5, 2013 DISCONTINUEDA Business Partner of Renesas Electronics Corporation. NE663M04 / 2SC5509 Chapter Title ELECTRICAL CHARACTERISTICS (T = +25 C) A Parameter Symbol Conditions MIN. TYP. MAX.Unit DC Characteristics Collector Cut-off Current I V = 5 V, I = 0 600 nA CBO CB E Emitter Cut-off Current I V = 1 V, I = 0 600 nA EBO EB C Note 1 DC Current Gain h V = 2 V, I = 10 mA 50 70 100 FE CE C RF Characteristics Gain Bandwidth Product f V = 3 V, I = 90 mA, f = 2 GHz 13 15 GHz T CE C 2 Insertion Power Gain S V = 2 V, I = 50 mA, f = 2 GHz 8 11 dB 21e CE C Noise Figure NF V = 2 V, I = 10 mA, f = 2 GHz, 1.2 1.7 dB CE C Z = Z S opt Note 2 Reverse Transfer Capacitance C V = 2 V, I = 0, f = 1 MHz 0.5 0.75 pF re CB E Note 3 Maximum Available Power Gain MAG V = 2 V, I = 50 mA, f = 2 GHz 14 dB CE C Note 4 Maximum Stable Power Gain MSG V = 2 V, I = 50 mA, f = 2 GHz 15 dB CE C Note 5 Gain 1 dB Compression Output P V = 2 V, I = 70 mA , f = 2 GHz 17 dBm O (1 dB) CE C Power Note 5 3rd Order Intermodulation OIP V = 2 V, I = 70 mA , f = 2 GHz 27 dBm 3 CE C Distortion Output Intercept Point Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded S21 2 3. MAG = (K (K 1) ) S12 S21 4. MSG = S12 5. Collector current when P is output O (1 dB) h CLASSIFICATION FE Rank FB/YFB Marking T80 h Value 50 to 100 FE R09DS0056EJ0300 Rev.3.00 Page 2 of 8 Mar 5, 2013 DISCONTINUED