X-On Electronics has gained recognition as a prominent supplier of BFT92.215 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFT92.215 RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFT92.215 NXP

BFT92.215 electronic component of NXP
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See Product Specifications
Part No.BFT92.215
Manufacturer: NXP
Category: RF Bipolar Transistors
Description: Transistor: PNP; bipolar; 15V; 25mA; 300mW; SOT23
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.4526 ea
Line Total: USD 2.26

Availability - 0
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
0
Ship by Mon. 15 Jul to Fri. 19 Jul
MOQ : 5
Multiples : 5
5 : USD 0.4526
10 : USD 0.247
128 : USD 0.2333

   
Manufacturer
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Collector- Emitter Voltage VCEO Max
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We are delighted to provide the BFT92.215 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFT92.215 and other electronic components in the RF Bipolar Transistors category and beyond.

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BFT92.215 is a NXP product, which is a Dual NPN high-power transistor. It is intended for use in commercial and industrial applications, such as: motor control, lighting control and DC to DC converters. The transistor is constructed from a high voltage MMBT3904 NPN silicon epitaxial planar transistor, featuring an integrated ESD protection diode between its collector and base terminals. It has a maximum power dissipation of 625 mW and can handle up to 3 Amperes of current. It can provide switching up to 30 Volts in either PNP or NPN configuration. The BFT92.215 is a robust, high performance device that offers superior performance in applications where reliability and efficiency are essential.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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