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This literature is subject to all applicable copyright laws and is not for resale in any manner.MPSH24/MMBTH24 MPSH24/MMBTH24 NPN General Purpose Amplifier 3 This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low 2 frequency drift common-base VHF oscillator SOT-23 TO-92 1 applications with high output levels for driving FET Mark: 3A 1 mixers. 1. Base 2. Emitter 3. Collector 1. Base 2. Emitter 3. Collector Sourced from process 47. See MPSH11 for characteristics. Absolute Maximum Ratings T =25C unless otherwise noted C Symbol Parameter Value Units V Collector-Emitter Voltage 30 V CEO V Collector-Base Voltage 40 V CBO V Emitter-Base Voltage 4.0 V EBO I Collector current - Continuous 50 mA C T , T Junction and Storage Temperature -55 ~ +150 C J stg Electrical Characteristics T =25C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V Collector-Emitter Sustaining Voltage * I = 1.0mA, I = 0 30 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 100 A, I = 0 40 (BR)CBO C E V Emitter-Base Breakdown Voltage I = 10 A, I = 0 4.0 VV (BR)EBO E C I Collector Cutoff Current V = 15V, I = 0 50 nA CBO CB E On Characteristics h DC Current Gain I = 8.0mA, V = 10V 30 FE C CE Small Signal Characteristics f Current Gain Bandwidth Product I = 8.0mA, V = 10V, 400 MHz T C CE f = 100MHz C Collector-Base Capacitance V = 10V, I = 0, f = 1.0MHz 0.36 pF cb CB E * Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Thermal Characteristics T =25C unless otherwise noted A Max. Symbol Parameter Units MPSH24 *MMBTH24 P Total Device Dissipation 625 225 mW D Derate above 25C 5.0 1.8 mW/C R Thermal Resistance, Junction to Case 83.3 C/W JC R Thermal Resistance, Junction to Ambient 200 556 C/W JA * Device mounted on FR-4 PCB 1.6 1.6 0.06 2002 Fairchild Semiconductor Corporation Rev. C, November 2002