MPSH10 / MMBTH10 MPSH10 MMBTH10 C E TO-92 C E B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 A to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 25 V CEO V Collector-Base Voltage 30 V CBO V Emitter-Base Voltage 3.0 V EBO I Collector Current - Continuous 50 mA C Operating and Storage Junction Temperature Range -55 to +150 T , T C J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units MPSH10 *MMBTH10 P Total Device Dissipation 350 225 mW D 2.8 1.8 Derate above 25C mW/C R Thermal Resistance, Junction to Case 125 C/W JC Thermal Resistance, Junction to Ambient 357 556 R C/W JA *Device mounted on FR-4 PCB 1.6 X 1.6 X 0.06 1997 Fairchild Semiconductor CorporationMPSH10 / MMBTH10 NPN RF Transistor (continued) Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V Collector-Emitter Sustaining Voltage* I = 1.0 mA, I = 0 25 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 100 A, I = 0 30 V (BR)CBO C E V Emitter-Base Breakdown Voltage 3.0 V I = 10 A, I = 0 (BR)EBO E C I Collector Cutoff Current V = 25 V, I = 0 100 nA CBO CB E I Emitter Cutoff Current V = 2.0 V, I = 0 100 nA EBO EB C ON CHARACTERISTICS h DC Current Gain I = 4.0 mA, V = 10 V 60 FE C CE Collector-Emitter Saturation Voltage I = 4.0 mA, I = 0.4 mA 0.5 V V C B CE(sat) V Base-Emitter On Voltage I = 4.0 mA, V = 10 V 0.95 V BE(on) C CE SMALL SIGNAL CHARACTERISTICS f Current Gain - Bandwidth Product I = 4.0 mA, V = 10 V, 650 MHz T C CE f = 100 MHz C Collector-Base Capacitance V = 10 V, I = 0, f = 1.0 MHz 0.7 pF CB E cb Common-Base Feedback Capacitance V = 10 V, I = 0, f = 1.0 MHz 0.35 0.65 pF C rb CB E Collector Base Time Constant I = 4.0 mA, V = 10 V, 9.0 pS rbC C CB c f = 31.8 MHz *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% 3 Spice Model NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=308.6 Ne=1.197 Ise=69.28E-18 Ikf=22.83m Xtb=1.5 Br=1.11 Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.558n Tf=135.8p Itf=.27 Vtf=10 Xtf=30 Rb=10)