X-On Electronics has gained recognition as a prominent supplier of TAN150 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. TAN150 RF Bipolar Transistors are a product manufactured by Microchip. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

TAN150 Microchip

TAN150 electronic component of Microchip
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See Product Specifications
Part No.TAN150
Manufacturer: Microchip
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors Bipolar/LDMOS Transistor
Datasheet: TAN150 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 318.5356
10 : USD 317.0268
25 : USD 308.621
100 : USD 307.6375
N/A

   
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We are delighted to provide the TAN150 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TAN150 and other electronic components in the RF Bipolar Transistors category and beyond.

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TAN150 150 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION CASE OUTLINE 55AT, Style 1 The TAN150 is a high powered COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation 25 C 583 W Maximum Voltage and Current Collector to Base Voltage (BV) 55 V ces Emitter to Base Voltage (BV) 3.5 V ebo Collector Current (I) 15.0 A c Maximum Temperatures Storage Temperature -65 to +150 C Operating Junction Temperature +200 C ELECTRICAL CHARACTERISTICS 25C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS P Power Out F = 960-1215 MHz 150 W out P Power Input Vcc = 50 Volts 30 W in P Power Gain 7.0 dB PW = 20 sec g Collector Efficiency DF = 5% 38 % c VSWR Load Mismatch Tolerance F = 1090 MHz 10:1 FUNCTIONAL CHARACTERISTICS 25 C BV Emitter to Base Breakdown Ie = 10 mA 3.5 V ebo BV Collector to Emitter Breakdown Ic = 50 mA 55 V ces h DC Current Gain Vce = 5V, Ic = 1 A 10 FE 1 Thermal Resistance 0.3 jc C/W NOTE 1: At rated output power and pulse conditions . Rev A: Updated June 2009 MICROSEMI. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. MICROSEMI RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. Microsemi: 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 TAN150 CASE DRAWING: MICROSEMI. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. MICROSEMI RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. Microsemi: 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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