X-On Electronics has gained recognition as a prominent supplier of MMBTH10RG RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. MMBTH10RG RF Bipolar Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

MMBTH10RG ON Semiconductor

MMBTH10RG electronic component of ON Semiconductor
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See Product Specifications
Part No.MMBTH10RG
Manufacturer: ON Semiconductor
Category: RF Bipolar Transistors
Description: Transistors RF Bipolar NPN RF Transistor
Datasheet: MMBTH10RG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.1028
10 : USD 0.0888
25 : USD 0.0766
50 : USD 0.0629
100 : USD 0.0623
250 : USD 0.0611
500 : USD 0.0611
1000 : USD 0.0611
N/A

Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.0509
9000 : USD 0.0489
15000 : USD 0.0489
60000 : USD 0.0489
90000 : USD 0.0489
N/A

Obsolete
0
MOQ : 5342
Multiples : 5342
5342 : USD 0.0763
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.6954
10 : USD 0.4575
100 : USD 0.0817
1000 : USD 0.0669
3000 : USD 0.0544
9000 : USD 0.0523
24000 : USD 0.0492
45000 : USD 0.047
99000 : USD 0.047
N/A

Obsolete
0
MOQ : 109
Multiples : 1
109 : USD 0.0648
250 : USD 0.0611
N/A

Obsolete
   
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We are delighted to provide the MMBTH10RG from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBTH10RG and other electronic components in the RF Bipolar Transistors category and beyond.

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.MMBTH10RG MMBTH10RG NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with C collector currents in the 100 A to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. E Sourced from process 42. SOT-23 B Mark: 3E 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* T =25C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Emitter Voltage 40 V CEO Collector-Base Voltage 40 V V CBO Emitter-Base Voltage 4.0 V V EBO I Collector Current - Continuous 50 mA C , T Operating and Storage Junction Temperature Range -55 ~ 150 C T J STG * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Emitter Sustaining Voltage * I = 1.0 mA, I = 0 40 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 10 A, I = 0 40 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 1.0 A, I = 0 4.0 V (BR)EBO E C I Collector Cutoff Current V = 30 V, I = 0 100 nA CBO CB E On Characteristics h DC Current Gain I = 1.0 mA, V = 6.0 V 50 120 V FE C CE V Collector-Emitter Saturation Voltage I = 10 mA, I = 5.0 mA 0.2 V CE(sat) C B Small Signal Characteristics f Current Gain - Bandwidth Product I = 2.0 mA, V = 10 V, 450 MHz T C CE f = 100 MHz C Collector-Base Capacitance V = 10 V, I = 0, f = 1.0 MHz 0.6 pF cb CB E = 5.0 mA, V = 10 V, 12 pS rbCc Collector Base Time Constant I C CB f = 79.8 MHz * Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Thermal Characteristics T =25C unless otherwise noted a Symbol Parameter Max. Units P Total Device Dissipation 225 mW D Derate above 25C 1.8 mW/C Thermal Resistance, Junction to Ambient 556 C/W R JA *Device mounted on FR-4 PCB 1.6 X 1.6 X 0.06 2004 Fairchild Semiconductor Corporation Rev. A, April 2004

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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