XY DATA SHEET SILICON TRANSISTOR PA800T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The PA800T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS to amplify low noise in the VHF band to the UHF band. (Unit: mm) 2.10.1 FEATURES 1.250.1 Low Noise NF = 1.9 dB TYP. f = 2 GHz, VCE = 1 V, IC = 3 mA High Gain 2 S21e = 6.5 dB TYP. f = 2 GHz, VCE = 1 V, IC = 3 mA A Mini Mold Package Adopted Built-in 2 Transistors (2 2SC4228) ORDERING INFORMATION PART NUMBER QUANTITY PACKING STYLE PA800T Loose products Embossed tape 8 mm wide. Pin 6 (Q1 (50 PCS) Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) PIN CONFIGURATION (Top View) face to perforation side of the tape. PA800T-T1 Taping products (3 KPCS/Reel) 65 4 Q1 Remark To order evaluation samples, please contact your nearby sales office. Q2 Part number for sample order: PA800T-A (Unit Sample quantity is 50 pcs.) 12 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PIN CONNECTIONS 1. Collector (Q1) 4. Emitter (Q2) PARAMETER SYMBOL RATING UNIT 2. Emitter (Q1) 5. Base (Q2) 3. Collector (Q2) 6. Base (Q1) Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 10 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 35 mA Total Power Dissipation PT 150 in 1 element mW Note 200 in 2 elements Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C Note 110 mW must not be exceeded in 1 element. The information in this document is subject to change without notice. Document No. ID-3634 (O.D. No. ID-9141) Date Published April 1995 P DISCONTINUED 2.00.2 0.90.1 1.3 0.65 0.65 0.7 3 2 1 0~0.1 4 5 6 +0.1 0.15 0 +0.1 0.2 02 Elements in Total Per Element PA800T ELECTRICAL CHARACTERISTICS (TA = 25 C) PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT Collector Cutoff Current ICBO VCB = 10 V, IE = 0 1.0 A Emitter Cutoff Current IEBO VEB = 1 V, IC = 0 1.0 A Note 1 DC Current Gain hFE VCE = 3 V, IC = 5 mA 80 200 Gain Bandwidth Product fT VCE = 3 V, IC = 5 mA 5.5 80 GHz Note 2 Feed-back Capacitance Cre VCB = 3 V, IE = 0, f = 1 MHz 0.7 pF 2 Insertion Power Gain (1) S21e VCE = 1 V, IC = 3 mA, f = 2 GHz 4.5 6.5 dB 2 Insertion Power Gain (2) S21e VCE = 3 V, IC = 5 mA, f = 2 GHz 5.5 7.5 dB Noise Figure (1) NF VCE = 1 V, IC = 3 mA, f = 2 GHz 1.9 3.2 dB Noise Figure (2) NF VCE = 3 V, IC = 5 mA, f = 2 GHz 1.9 3.2 dB Notes 1. Pulse Measurement: Pw 350 s, Duty cycle 2 % 2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge. hFE CLASSIFICATION Rank KB Marking RL hFE Value 80 to 200 TYPICAL CHARACTERISTICS (TA = 25 C) PT - TA Characteristics IC - VCE Characteristics 25 Free Air 200 20 15 100 10 40 A 5 IB = 20 A 0 50 100 150 0 5 1.0 Ambient Temperature TA (C) Collector to Emitter Voltage VCE (V) IC - VBE Characteristics hFE - IC Characteristics 20 200 VCE = 3 V VCE = 3 V 100 50 10 20 10 0 0.5 1.0 0.5 1 5 10 50 Base to Emitter Voltage VBE (V) Collector Current IC (mA) 2 60 A 80 A 100 A 120 A 160 A 140 A DISCONTINUED Total Power Dissipation PT (mW) Collector Current IC (mA) DC Current Gain hFE Collector Current IC (mA)