X-On Electronics has gained recognition as a prominent supplier of MRF10031 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. MRF10031 RF Bipolar Transistors are a product manufactured by MACOM. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

MRF10031 MACOM

MRF10031 electronic component of MACOM
Images are for reference only
See Product Specifications
Part No. MRF10031
Manufacturer: MACOM
Category: RF Bipolar Transistors
Description: Transistors RF Bipolar
Datasheet: MRF10031 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 222.552 ea
Line Total: USD 222.55 
Availability - 14
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
14
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 222.552
10 : USD 221.837
20 : USD 221.122
60 : USD 220.825
100 : USD 212.322

   
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Technology
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DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
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We are delighted to provide the MRF10031 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MRF10031 and other electronic components in the RF Bipolar Transistors category and beyond.

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MRF10031 Microwave Power Silicon NPN Transistor Rev. V1 30W (peak), 960 1215MHz, 36V Features Product Image Guaranteed performance 960-1215MHz, 36Vdc Output power: 30W peak Minimum gain: 9.0dB min., 9.5dB typ. 100% tested for load mismatch at all phase angles with 10:1 VSWR Hermetically sealed, industry standard package Silicon nitride passivated Gold metallized, emitter ballasted for long life and resistance to metal migration Internal input matching for broadband operation Description and Applications CASE 332A03, STYLE 2 Designed for 960 1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode S transmitters. Maximum Ratings 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MRF10031 Microwave Power Silicon NPN Transistor Rev. V1 30W (peak), 960 1215MHz, 36V Output power versus input power 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit:

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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