MMBV3102LT1G Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solidstate reliability in replacement of mechanical tuning methods. Features MMBV3102LT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage V 30 Vdc (BR)R (I = 10 Adc) R Reverse Voltage Leakage Current I 0.1 Adc R (V = 25 Vdc, T = 25C) R A Diode Capacitance Temperature Coefficient TC 300 ppm/C C (V = 4.0 Vdc, f = 1.0 MHz) R C , Diode Capacitance Q, Figure of Merit C , Capacitance Ratio t R V = 3.0 Vdc, f = 1.0 MHz V = 3.0 Vdc C /C R R 3 25 pF f = 50 MHz f = 1.0 MHz Device Min Nom Max Min Min Typ MMBV3102LT1 20 22 25 200 4.5 4.8 TYPICAL CHARACTERISTICS 20 40 T = 25C A 36 10 f = 50 MHz 32 28 5.0 24 3.0 2.0 20 16 1.0 12 f = 1.0 MHz T = 25C A 0.5 8.0 4.0 0.3 0 0.2 0 3.0 6.0 9.0 12 15 18 21 24 27 30 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 V , REVERSE VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) R R Figure 1. Diode Capacitance Figure 2. Figure of Merit 100 1.04 V = 3.0 Vdc R 1.03 f = 1.0 MHz 10 1.02 V = 20 Vdc R 1.01 1.0 1.00 0.1 0.99 0.98 0.01 0.97 0.001 0.96 -60 -200++20 +60100 +140 -75 -50 -25 0 +25 +50 +75 +100 +125 T , AMBIENT TEMPERATURE (C) T , AMBIENT TEMPERATURE (C) A A Figure 3. Leakage Current Figure 4. Diode Capacitance NOTES ON TESTING AND SPECIFICATIONS 1. C is the ratio of C measured at 3.0 Vdc divided by C measured at 25 Vdc. R T T