MMBZxxVxL, SZMMBZxxVxL Series Zener Diodes, 40 Watt Peak Power SOT23 Dual Common Cathode Zeners www.onsemi.com These dual monolithic silicon zener diodes are designed for applications requiring protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common cathode design protects two separate lines using only one package. These devices are ideal for SOT23 situations where board space is at a premium. CASE 318 STYLE 9 Specification Features: SOT23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration ANODE 1 3 CATHODE Standard Zener Breakdown Voltage Range 15 V, 27 V, 39 V ANODE 2 Peak Power 40 W 1.0 ms (Bidirectional), per Figure 5 Waveform ESD Rating of Class 3B (exceeding 16 kV) per the Human MARKING DIAGRAM Body Model ESD Rating of IEC6100042 Level 4, 30 kV Contact Discharge Low Leakage < 100 nA XXX M Flammability Rating: UL 94 VO 1 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and XXX = 15D, 27C or 39C PPAP Capable M = Date Code These are PbFree Devices = PbFree Package Mechanical Characteristics: (Note: Microdot may be in either location) CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: ORDERING INFORMATION 260C for 10 Seconds Device Package Shipping MMBZ15VDLT1G, SOT23 3,000 / SZMMBZ15VDLT1G (PbFree) Tape & Reel MMBZ15VDLT3G, SOT23 10,000 / SZMMBZ15VDLT3G (PbFree) Tape & Reel MMBZxxVCLT1G, SOT23 3,000 / SZMMBZxxVCLT1G (PbFree) Tape & Reel MMBZxxVCLT3G, SOT23 10,000 / SZMMBZxxVCLT3G (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: August, 2018 Rev. 17 MMBZ15VDLT1/DMMBZxxVxL, SZMMBZxxVxL Series MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation 1.0 ms (Note 1) T 25C P 40 Watts L pk Total Power Dissipation on FR5 Board (Note 2) P D T = 25C 225 mW A Derate above 25C 1.8 mW/C Thermal Resistance JunctiontoAmbient R 556 C/W JA Total Power Dissipation on Alumina Substrate (Note 3) P D T = 25C 300 mW A Derate above 25C 2.4 mW/C Thermal Resistance JunctiontoAmbient R 417 C/W JA Junction and Storage Temperature Range T , T 55 to +150 C J stg Lead Solder Temperature Maximum (10 Second Duration) T 260 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 5 and derate above T = 25C per Figure 6. A 2. FR5 = 1.0 x 0.75 x 0.62 in. 3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A I UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V V V V Working Peak Reverse Voltage C BR RWM RWM V I V R F I Maximum Reverse Leakage Current V I R RWM T V Breakdown Voltage I BR T I Test Current T V Maximum Temperature Coefficient of V BR BR I PP I Forward Current F V Forward Voltage I UniDirectional Zener F F ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (V = 0.9 V Max I = 10 mA) F F Breakdown Voltage V I (Note 5) C PP V (Note 4) (V) I V I V I V V BR T C PP RWM R RWM BR Device Volts nA Min Nom Max mA V A mV/ C Device* Marking MMBZ15VDLT1G/T3G 15D 12.8 100 14.3 15 15.8 1.0 21.2 1.9 12 (V = 1.1 V Max I = 200 mA) F F Breakdown Voltage V I (Note 5) C PP V (Note 4) (V) I V I V I V V BR T C PP RWM R RWM BR Device Marking Volts nA Min Nom Max mA V A mV/ C Device* MMBZ27VCLT1G/T3G 27C 22 50 25.65 27 28.35 1.0 38 1.0 26 MMBZ39VCLT1G/T3G 39C 31.2 50 37.05 39 40.95 1.0 55 0.76 35.3 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. V measured at pulse test current I at an ambient temperature of 25C. BR T 5. Surge current waveform per Figure 5 and derate per Figure 6 *Include SZ-prefix devices where applicable. www.onsemi.com 2