X-On Electronics has gained recognition as a prominent supplier of MS2213 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. MS2213 RF Bipolar Transistors are a product manufactured by Microchip. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

MS2213 Microchip

MS2213 electronic component of Microchip
Images are for reference only
See Product Specifications
Part No.MS2213
Manufacturer: Microchip
Category: RF Bipolar Transistors
Description: Trans RF BJT NPN 3.5A 4-Pin Case M214
Datasheet: MS2213 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 301.5253 ea
Line Total: USD 301.53 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 10 Dec to Mon. 16 Dec
MOQ : 1
Multiples : 1
1 : USD 301.5253

   
Manufacturer
Product Category
Transistor Polarity
Operating Frequency
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Mounting Style
Collector- Base Voltage Vcbo
Operating Temp Range
Pin Count
Number Of Elements
Operating Temperature Classification
Category
Rad Hardened
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MS2213 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MS2213 and other electronic components in the RF Bipolar Transistors category and beyond.

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA - PHONE: (215) 631 - FAX: (215) 631 - MS2213 RS 960 - :: 960 - This device operates over a . AABSOLUTE MAXIMUM RATINGS BSOLUTE MAXIMUM RATINGS V Collector - Supply Voltage V CC I A C P Power Dissipation W DISS T Junction Temperature (RF Pulsed Operation) C J T - C STG Thermal DataThermal Data R Junction - TH(J - C) or contact our factory direct. WWW.ADVANCEDPOWER.COM Visit our website at Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein C/W 2.2 case Thermal Resistance 65 to +200 Storage Temperature +250 75 3.5 Device Current 40 Unit Value Parameter Symbol C) (Tcase = 25 can withstand a 15:1 VSWR mismatch under load wide range of pulse widths, duty cycles and temperatures, and operation. under Class C amplifier Gold metallization and emitter ballasting assure high reliability 1215 MHz. for JTIDS pulsed power applications from The MS2213 is a silicon NPN bipolar device specifically designed DESCRIPTION POUT = 30 W MIN. WITH 7.8 dB GAIN CLASS C OPERATION HERMETIC PACKAGE GOLD METALLIZATION COMMON BASE 1215 MHz Features AVIONICS/JTIDS APPLICATIONS RF & MICROWAVE TRANSISTO 9855 9840 1013 18936 MS2213 ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25C)C) STATICSTATIC Test C onditions Typ. I --- --- V CBO C I --- --- V EBO --- --- V I R CER C BE I V = 35 V ------ --- CES CB h V = 5 V I --- --- FE CE C DYNAMICDYNAMIC Test Conditi ons Typ. P f = 960 - V = 35V P --- --- W OUT CC IN G f = 960 - V = 35V P --- --- dB P CC IN f = 960 - 1215 MHz V =35V P --- % C CC IN Pulse format: 6.4 us on 6.6 us off, repeat for 3.3ms, then off for 4.5125 ms. Duty Cycle: Burst 49.2%, overall 20.8%. IMPEDANCE DATAIMPEDANCE DATA Freq. (MHz) Z ( ) Z ( ) IN OUT 4.5 + j 6.0 11.0 + j 0.5 5.5 + j 6.3 j 2.0 5.0 + j 5.0 j 5.0 or contact our factory direct. WWW.ADVANCEDPOWER.COM Visit our website at Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein 12.5 1215 12.0 1090 960 40 =5.0W 7.8 =5.0W 1215 MHz 30 =5.0W 1215 MHz Max. Min. Unit Symbol Value 150 15 = 1A mA 5.0 =10 = 20mA 55 BV E 3.5 = 1mA BV 55 = 10mA BV Max. Min. Unit Symbol Value

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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