X-On Electronics has gained recognition as a prominent supplier of MSASC75H45FV/TR Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. MSASC75H45FV/TR Schottky Diodes & Rectifiers are a product manufactured by Microchip. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

MSASC75H45FV/TR Microchip

MSASC75H45FV/TR electronic component of Microchip
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See Product Specifications
Part No.MSASC75H45FV/TR
Manufacturer: Microchip
Category: Schottky Diodes & Rectifiers
Description: MSASC75H45FVTR microsemi schottky diodes & rectifiers discrete semiconductors
Datasheet: MSASC75H45FV/TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 194.4274 ea
Line Total: USD 194.43 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 194.4274

   
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We are delighted to provide the MSASC75H45FV/TR from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MSASC75H45FV/TR and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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2830 S. Fairview St. Santa Ana, CA 92704 1N6818 PH: (714) 979-8220 FAX: (714) 966-5256 (MSASC75H45F) Features 1N6818R Tungsten/Platinum schottky barrier for very low VF Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability (MSASC75H45FR) Epitaxial structure minimizes forward voltage drop PRELIMINARY Hermetically sealed, low profile ceramic surface mount power package 45 Volts Low package inductance Very low thermal resistance 75 Amps Available as standard polarity (strap is anode: 1N6818) and reverse polarity (strap is cathode: 1N6818R) LOW VOLTAGE DROP SCHOTTKY Maximum Ratings @ 25C (unless otherwise specified) DIODE DESCRIPTION SYMBOL MAX. UNIT Peak Repetitive Reverse Voltage V 45 Volts RRM Working Peak Reverse Voltage V 45 Volts RWM DC Blocking Voltage V 45 Volts R I 75 Amps Average Rectified Forward Current, Tc 125C F(ave) dI /dT 4 derating, forward current, Tc 125C Amps/C F Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave I 500 Amps FSM Peak Repetitive Reverse Surge Current, tp= 1s, f= 1kHz I 2 Amp RRM Junction Temperature Range T -55 to +150 j C Storage Temperature Range T -55 to +150 C stg Thermal Resistance, Junction to Case: 1N6818 0.50 C/W JC 1N6818R 0.65 Mechanical Outline ThinKey 4 Datasheet# MSC1029A1N6818 (MSASC75H45F) 1N6818R (MSASC75H45FR) Electrical Parameters DESCRIPTION SYMBOL CONDITIONS MIN TYP. MAX UNIT Reverse (Leakage) IR 0.75 7.5 mA VR= 45 Vdc, Tc= 25C 25 IR 65 - mA VR= 12 Vdc, Tc= 125C 125-1 Current IR 125 - mA VR= 36 Vdc, Tc= 125C 125-2 IR 175 300 mA VR= 45 Vdc, Tc= 125C 125 Forward Voltage VF1 290 - mV IF= 2 A, Tc= 25C pulse test, VF2 350 400 mV IF= 10 A, Tc= 25C VF3 415 480 mV pw= 300 s IF= 25 A, Tc= 25C VF4 500 - mV d/c 2% IF= 50 A, Tc= 25C VF5 575 650 mV IF= 75 A, Tc= 25C VF6 650 - mV IF= 100 A, Tc= 25C VF7 390 - mV IF= 2 A, Tc= -55C VF8 440 500 MV IF= 10 A, Tc= -55C VF9 480 550 MV IF= 25 A, Tc= -55C VF10 IF= 50 A, Tc= -55C 535 - MV VF11 IF= 75 A, Tc= -55C 580 660 mV VF12 IF= 2 A, Tc= 125C 165 - MV VF13 IF= 10 A, Tc= 125C 250 310 MV VF14 IF= 25 A, Tc= 125C 350 420 MV VF15 IF= 50 A, Tc= 125C 475 - MV VF16 IF= 75 A, Tc= 125C 565 650 mV VFa 200 - mV IF= 100 mA, Tc= 25C VFb 60 - mV IF= 100 mA, Tc= 125C VFc 325 - mV IF= 100 mA, Tc= -55C Junction Capacitance Cj1 VR= 10 Vdc 1850 - pF Cj2 VR= 5 Vdc 2500 3000 pF Breakdown Voltage BVR 58 V IR= 5 mA, Tc= 25C 45 50 V IR= 5 mA, Tc= -55C 0.7 0.6 0.5 -55C 0.4 +25C 0.3 +125C 0.2 0.1 0 1 10 100 1000 IF(A) VF(V)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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Atmel
Atmel Wireless (VA)
M4S
M6S
M8S
M9S
MCP
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Micrel Inc
MICREL SEMICONDUCTOR
MICREL SYNERGY SEMI
MICROCHIP (ATMEL)
MICROCHIP (MICREL)
MICROCHIP (MICROSEMI)
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Microchip Tech
MICROCHIP TECH.
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Microsemi Corporation
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MSC
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