BAS3007ARPPE6327HTSA1 Infineon

BAS3007A... Low VF Schottky Diode Array Reverse voltage: 30 V Forward current: 0.9 A Small diode quad array for polarity independence, reverse polarity protection and low loss bridge rectification Very low forward voltage: 0.5 V typ. 0.7 A (per diode) Fast switching 1) Pb-free (ROHS compliant) package Qualified according AEC Q101 BAS3007A-RPP + ~ - ~ Type Package Configuration Marking BAS3007A-RPP SOT143 bridge E1s Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 2) 30 V Diode reverse voltage V R 2) 30 Peak reverse voltage V RM 2) RMS reverse voltage V 21 R(RMS) 2) mA Forward current I F T 46C 900 S T 82C 700 S Non-repetitive peak surge forward current I 5 A FSM (t 10 ms) 150 C Junction temperature T j Storage temperature T -65 ... 150 stg 1 Pb-containing package may be available upon special request 2 For T > 25C the derating of V and I has to be considered. Please refer to the attached curves. A R F 1 2007-11-20 4 3 D3 D4 D2 D1 1 2BAS3007A... Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 95 thJS Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 2) Reverse current (per diode) I A R V = 12 V - - 30 R V = 30 V - - 350 R 2)3) V Forward voltage (per diode) V F I = 100 mA - 0.35 0.4 F I = 350 mA - 0.4 0.5 F I = 500 mA - 0.45 0.55 F I = 700 mA - 0.5 0.6 F I = 900 mA - 0.6 0.7 F AC Characteristics - 9 15 pF Diode capacitance (per diode) C T V = 5 V, f = 1 MHz R 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2 Pulsed test, t = 300 s D = 0.01 p 3 When used as shown for Reverse Polarity Protection (RPP, see page 4), the voltage available to the circuit being protected will be two diode drops below the power supply voltage. In other words, the supply current will pass through two diodes. 2 2007-11-20