BAS170WS
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diode
FEATURES
Schottky diode for high-speed switching
Circuit protection
Voltage clamping
High-level detecting and mixing
AEC-Q101 qualified available
MECHANICAL DATA
Base P/N-E3 - RoHS-compliant, commercial grade
Case: SOD-323
Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
Weight: approx. 4.3 mg
Material categorization: for definitions of compliance
Packaging codes/options:
please see www.vishay.com/doc?99912
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
INTERNAL
PART ORDERING CODE TYPE MARKING REMARKS
CONSTRUCTION
BAS170WS-E3-08 or BAS170WS-E3-18
BAS170WS Single diode 73 Tape and reel
BAS170WS-HE3-08 or BAS170WS-HE3-18
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage V 70 V
RRM
Forward continuous current I 70 mA
F
Surge forward current t < 1 s I 600 mA
p FSM
(1)
Power dissipation P 200 mW
tot
Note
(1)
Valid provided that electrodes are kept at ambient temperature
THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
(1)
Thermal resistance junction to ambient air R 650 K/W
thJA
Junction temperature T 125 C
j
Operating temperature range T -55 to +125 C
op
Storage temperature range T -65 to +150 C
stg
Note
(1)
Valid provided that electrodes are kept at ambient temperature
ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Reverse breakdown voltage I = 10 A (pulsed) V 70 V
R (BR)
V = 50 V I 0.1 A
R R
Leakage current
V = 70 V I 10 A
R R
I = 1 mA V 375 410 mV
F F
Forward voltage
I = 10 mA V 705 750 mV
F F
(1)
Forward voltage I = 15 mA V 880 1000 mV
F F
Diode capacitance V = 0 V, f = 1 MHz C 1.5 2 pF
R D
Differential forward resistance I = 5 mA, f = 10 kHz r 34
F f
Note
(1)
Pulse test; t 300 s
p
Rev. 2.1, 14-Oct-16 Document Number: 85653
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000BAS170WS
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
0.40 [0.016]
0.25 [0.010]
1.95 [0.077]
1.60 [0.063]
Cathode bar
2.85 [0.112]
2.50 [0.098]
Footprint recommendation:
0.8 [0.031] 0.8 [0.031]
1.6 [0.063]
Document no.: S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 6 - Date: 23.Sept.2016
17443
Rev. 2.1, 14-Oct-16 Document Number: 85653
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
0 - 8
1.15 [0.045]
0.8 [0.031]
0.40 [0.016]
0.2 [0.008]
0.20 [0.008]
0.15 [0.006]
1.5 [0.059]
0.10 [0.004]
1.1 [0.043]
0.6 [0.024]
0.1 [0.004] max.