X-On Electronics has gained recognition as a prominent supplier of BAS19-G3-08 Small Signal Switching Diodes across the USA, India, Europe, Australia, and various other global locations. BAS19-G3-08 Small Signal Switching Diodes are a product manufactured by Vishay. We provide cost-effective solutions for Small Signal Switching Diodes, ensuring timely deliveries around the world.

BAS19-G3-08 Vishay

BAS19-G3-08 electronic component of Vishay
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Part No.BAS19-G3-08
Manufacturer: Vishay
Category: Small Signal Switching Diodes
Description: Small Signal Switching Diodes 120 Volt 200mA 50ns 2.5A IFSM
Datasheet: BAS19-G3-08 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.299 ea
Line Total: USD 0.3 
Availability - 6722
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6722
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.299
10 : USD 0.2059
100 : USD 0.1012
1000 : USD 0.0586
2500 : USD 0.0506
10000 : USD 0.0391
15000 : USD 0.0333
45000 : USD 0.0299
90000 : USD 0.0287

   
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Ir - Reverse Current
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We are delighted to provide the BAS19-G3-08 from our Small Signal Switching Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAS19-G3-08 and other electronic components in the Small Signal Switching Diodes category and beyond.

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BAS19-G, BAS20-G, BAS21-G www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES Silicon epitaxial planar diode 3 Fast switching diode in case SOT-23, especially suited for automatic insertion General purpose switching applications High conductance 12 AEC-Q101 qualified available (part number on request) Base P/N-G3 - green, commercial grade Material categorization: DESIGN SUPPORT TOOLS click logo to get started for definitions of compliance please see www.vishay.com/doc 99912 Models Available MECHANICAL DATA Case: SOT-23 Weight: approx. 8.1 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE TYPE PART ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS DIFFERENTIATION BAS19-G V = 100 V BAS19-G3-08 or BAS19-G3-18 A8G Single Tape and reel R BAS20-G V = 150 V BAS20-G3-08 or BAS20-G3-18 A9G Single Tape and reel R BAS21-G V = 200 V BAS21-G3-08 or BAS21-G3-18 AAG Single Tape and reel R ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BAS19-G V 100 V R Continuous reverse voltage BAS20-G V 150 V R BAS21-G V 200 V R BAS19-G V 120 V RRM Repetitive peak reverse voltage BAS20-G V 200 V RRM BAS21-G V 250 V RRM Non-repetitive peak forward current t = 1 s 2.5 I A FSM Non-repetitive peak forward surge current t = 1 s 0.5 (1) Maximum average forward rectified current (av. over any 20 ms period) I 200 mA F(AV) (2) DC forward current I 200 mA F Repetitive peak forward current I 625 mA FRM (2) Power dissipation P 250 mW tot Notes (1) Measured under pulse conditions pulse time = t 0.3 ms p (2) Device on fiberglass substrate, see layout on next page Rev. 1.3, 13-Feb-18 Document Number: 83390 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BAS19-G, BAS20-G, BAS21-G www.vishay.com Vishay Semiconductors THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 430 K/W thJA Junction temperature T 150 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +150 C op Note (1) Device on fiberglass substrate, see layout drawing below ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT I = 100 mA V 1.0 V F F Forward voltage I = 200 mA V 1.25 V F F V = 100 V BAS19-G I 100 nA R R V = 150 V BAS20-G I 100 nA R R Leakage current V = 200 V BAS21-G I 100 nA R R V = V , T = 150 C I 100 A R Rmax. J R Dynamic forward resistance I = 10 mA r 5 F f Diode capacitance V = 0, f = 1 MHz C 5pF R D I = I = 30 mA, R = 100 , F R L Reverse recovery time t 50 ns rr i = 3 mA R LAYOUT FOR R TEST thJA Thickness: Fiberglass 1.5 mm (0.059 in.) Copper leads 0.3 mm (0.012 in.) 7.5 (0.3) 3 (0.12) 1 (0.4) 2 (0.8) 1 (0.4) 12 (0.47) 2 (0.8) 0.8 (0.03) 15 (0.59) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 Rev. 1.3, 13-Feb-18 Document Number: 83390 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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