BAS19-G, BAS20-G, BAS21-G www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES Silicon epitaxial planar diode 3 Fast switching diode in case SOT-23, especially suited for automatic insertion General purpose switching applications High conductance 12 AEC-Q101 qualified available (part number on request) Base P/N-G3 - green, commercial grade Material categorization: DESIGN SUPPORT TOOLS click logo to get started for definitions of compliance please see www.vishay.com/doc 99912 Models Available MECHANICAL DATA Case: SOT-23 Weight: approx. 8.1 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE TYPE PART ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS DIFFERENTIATION BAS19-G V = 100 V BAS19-G3-08 or BAS19-G3-18 A8G Single Tape and reel R BAS20-G V = 150 V BAS20-G3-08 or BAS20-G3-18 A9G Single Tape and reel R BAS21-G V = 200 V BAS21-G3-08 or BAS21-G3-18 AAG Single Tape and reel R ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BAS19-G V 100 V R Continuous reverse voltage BAS20-G V 150 V R BAS21-G V 200 V R BAS19-G V 120 V RRM Repetitive peak reverse voltage BAS20-G V 200 V RRM BAS21-G V 250 V RRM Non-repetitive peak forward current t = 1 s 2.5 I A FSM Non-repetitive peak forward surge current t = 1 s 0.5 (1) Maximum average forward rectified current (av. over any 20 ms period) I 200 mA F(AV) (2) DC forward current I 200 mA F Repetitive peak forward current I 625 mA FRM (2) Power dissipation P 250 mW tot Notes (1) Measured under pulse conditions pulse time = t 0.3 ms p (2) Device on fiberglass substrate, see layout on next page Rev. 1.3, 13-Feb-18 Document Number: 83390 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BAS19-G, BAS20-G, BAS21-G www.vishay.com Vishay Semiconductors THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 430 K/W thJA Junction temperature T 150 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +150 C op Note (1) Device on fiberglass substrate, see layout drawing below ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT I = 100 mA V 1.0 V F F Forward voltage I = 200 mA V 1.25 V F F V = 100 V BAS19-G I 100 nA R R V = 150 V BAS20-G I 100 nA R R Leakage current V = 200 V BAS21-G I 100 nA R R V = V , T = 150 C I 100 A R Rmax. J R Dynamic forward resistance I = 10 mA r 5 F f Diode capacitance V = 0, f = 1 MHz C 5pF R D I = I = 30 mA, R = 100 , F R L Reverse recovery time t 50 ns rr i = 3 mA R LAYOUT FOR R TEST thJA Thickness: Fiberglass 1.5 mm (0.059 in.) Copper leads 0.3 mm (0.012 in.) 7.5 (0.3) 3 (0.12) 1 (0.4) 2 (0.8) 1 (0.4) 12 (0.47) 2 (0.8) 0.8 (0.03) 15 (0.59) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 Rev. 1.3, 13-Feb-18 Document Number: 83390 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000