NSVM1MA152WAT1G ON Semiconductor

M1MA151WAT1, M1MA152WAT1 Preferred Device Common Anode Silicon Dual Switching Diodes These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These M1MA151WAT1, M1MA152WAT1 ELECTRICAL CHARACTERISTICS (T = 25C) A Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current I R M1MA151WAT1 V = 35 V 0.1 Adc R M1MA152WAT1 V = 75 V R Forward Voltage V I = 100 mA 1.2 Vdc F F Reverse Breakdown Voltage V R M1MA151WAT1 I = 100 A 40 Vdc R M1MA152WAT1 80 Diode Capacitance C V = 0, f = 1.0 MHz 15 pF D R Reverse Recovery Time (Figure 1) t I = 10 mA, V = 6.0 V, 10 ns rr F R (Note 2) R = 100 , I = 0.1 I L rr R 2. t Test Circuit rr RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE t r t p t rr I F t t 10% R L I = 0.1 I rr R A 90% I = 10 mA F V = 6 V R V R t = 2 s p R = 100 L t = 0.35 ns r Figure 1. Reverse Recovery Time Equivalent Test Circuit