MMBT2907AM3T5G PNP General Purpose Transistor The MMBT2907AM3T5G device is a spinoff of our popular SOT23 threeleaded device. It is designed for general purpose amplifier applications and is housed in the SOT723 surface mount www.onsemi.com package. This device is ideal for lowpower surface mount applications where board space is at a premium. Features COLLECTOR 3 Reduces Board Space NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirements AECQ101 BASE Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS 2 Compliant EMITTER MAXIMUM RATINGS Rating Symbol Value Unit MARKING CollectorEmitter Voltage V 60 Vdc CEO DIAGRAM CollectorBase Voltage V 60 Vdc CBO 3 SOT723 EmitterBase Voltage V 5.0 Vdc EBO AC M CASE 631AA Collector Current Continuous I 600 mAdc 2 C STYLE 1 1 THERMAL CHARACTERISTICS AC = Specific Device Code Characteristic Symbol Max Unit M = Date Code Total Device Dissipation P mW D 265 FR5 Board (Note 1) mW/C T = 25C A 2.1 Derate above 25C ORDERING INFORMATION Thermal Resistance, R 470 C/W JA JunctiontoAmbient Device Package Shipping Total Device Dissipation P 640 mW D MMBT2907AM3T5G SOT723 8000/Tape & Alumina Substrate, (Note 2) T = 25C A (PbFree) Reel 5.1 mW/C Derate above 25C NSVMMBT2907AM3T5G SOT723 8000/Tape & Thermal Resistance, R 195 C/W JA (PbFree) Reel JunctiontoAmbient Junction and Storage Temperature T , T 55 to C For information on tape and reel specifications, J stg +150 including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Stresses exceeding those listed in the Maximum Ratings table may damage the Brochure, BRD8011/D. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: March, 2017 Rev. 1 MMBT2907AM3/DMMBT2907AM3T5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 3) V Vdc (BR)CEO 60 (I = 10 mAdc, I = 0) C B CollectorBase Breakdown Voltage V Vdc (BR)CBO 60 (I = 10 Adc, I = 0) C E EmitterBase Breakdown Voltage V Vdc (BR)EBO 5.0 (I = 10 Adc, I = 0) E C Collector Cutoff Current I nAdc CEX 50 (V = 30 Vdc, V = 0.5 Vdc) CE EB(off) Collector Cutoff Current I Adc CBO 0.010 (V = 50 Vdc, I = 0) CB E 10 (V = 50 Vdc, I = 0, T = 125C) CB E A Base Cutoff Current I nAdc BL 50 (V = 30 Vdc, V = 0.5 Vdc) CE EB(off) ON CHARACTERISTICS DC Current Gain h - FE (I = 0.1 mAdc, V = 10 Vdc) 75 - C CE (I = 1.0 mAdc, V = 10 Vdc) 100 - C CE (I = 10 mAdc, V = 10 Vdc) 100 - C CE (I = 150 mAdc, V = 10 Vdc) 100 300 C CE (I = 500 mAdc, V = 10 Vdc) (Note 3) 50 - C CE CollectorEmitter Saturation Voltage (Note 3) V Vdc CE(sat) (I = 150 mAdc, I = 15 mAdc) (Note 3) - -0.4 C B (I = 500 mAdc, I = 50 mAdc) - -1.6 C B BaseEmitter Saturation Voltage (Note 3) V Vdc BE(sat) (I = 150 mAdc, I = 15 mAdc) - -1.3 C B (I = 500 mAdc, I = 50 mAdc) - -2.6 C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (Notes 3, 4) f MHz T 200 (I = 50 mAdc, V = 20 Vdc, f = 100 MHz) C CE Output Capacitance C pF obo 8.0 (V = 10 Vdc, I = 0, f = 1.0 MHz) CB E Input Capacitance C ibo 30 (V = 2.0 Vdc, I = 0, f = 1.0 MHz) EB C SWITCHING CHARACTERISTICS TurnOn Time t 45 on (V = 30 Vdc, I = 150 mAdc, CC C Delay Time t 10 d I = 15 mAdc) B1 Rise Time t 40 r ns TurnOff Time t 100 off (V(V = 6.0 Vdc, I = 6.0 Vdc, I = 150 mAdc, = 150 mAdc, CCCC CC Storage Time t 80 s II = I = I = 15 mAdc) = 15 mAdc) B1B1 B2B2 Fall Time t 30 f 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 4. f is defined as the frequency at which h extrapolates to unity. T fe www.onsemi.com 2