MBD770DWT1G,
NSVMBD770DW1T1G
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
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package is excellent for hand held and portable applications where
space is limited.
Features
70 VOLTS SCHOTTKY
Extremely Fast Switching Speed
BARRIER DIODES
Low Forward Voltage
AEC Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Anode 1 6 Cathode
Compliant*
N/C 2 5 N/C
MAXIMUM RATINGS (T = 150C unless otherwise noted)
J
Cathode 3 4 Anode
Rating Symbol Value Unit
Forward Current I 100 mA
F
NonRepetitive Peak Forward Surge I 1 A
FSM
Current (60 Hz Half Sine)
MARKING
Reverse Voltage V 70 V
R
DIAGRAM
Forward Power Dissipation P
F
6
@ T = 25C 380 mW
A
Derate above 25C (Note 1) 3 mW/C
SOT363
CASE 419B
H5 M
Operating Junction and Storage T T 55 to +150 C
J, stg 1
STYLE 6
Temperature Range
1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
M = Date Code
assumed, damage may occur and reliability may be affected.
2
= PbFree Package
1. FR4 @ 100 mm , 1 oz Cu
(Note: Microdot may be in either location)
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
Device Package Shipping
MBD770DWT1G SOT363 3000 /
(PbFree) Tape & Reel
NSVMBD770DW1T1G SOT363 3000 /
(PbFree) Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2016
1 Publication Order Number:
July, 2016 Rev. 2 MBD770DW/DMBD770DWT1G, NSVMBD770DW1T1G
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
Reverse Breakdown Voltage V V
(BR)R
(I = 10 A) 70
R
Total Capacitance C pF
T
(V = 20 V, f = 1.0 MHz) 1.0
R
Reverse Leakage I nA
R
(V = 35 V) 200
R
Forward Voltage V mV
F
(I = 1.0 mA) 500
F
Forward Voltage V V
F
(I = 10 mA) 1.0
F
100
100000
150C
150C
55C
10000
125C
125C
100C
1000
10 100C
25C
75C
100
75C
10 25C
1
1
40C
0.1
0.1 0.01
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 010 20 30 40 50 60 70 80
V , FORWARD VOLTAGE (V) V , REVERSE VOLTAGE (V)
F R
Figure 1. Typical Forward Voltage Figure 2. Reverse Current versus Reverse
Voltage
1.4
T = 25C
A
f = 1 MHz
1.2
1
0.8
0.6
0.4
0.2
0
010 20 30 40 50 60
V , REVERSE VOLTAGE (V)
R
Figure 3. Typical Capacitance
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2
I , FORWARD CURRENT (mA)
F
C , TOTAL CAPACITANCE (pF)
T
I , REVERSE CURRENT (nA)
R