NSVR0240P2T5G ON Semiconductor

Schottky Barrier Diode NSR0240P2 Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dcdc converter, clamping and protection applications in portable devices. NSR0240P2 in a SOD 923 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting www.onsemi.com reduced space requirements. Features 40 V SCHOTTKY Very Low Forward Voltage Drop 460 mV 100 mA BARRIER DIODE Low Reverse Current 0.2 A 25 V VR 200 mA of Continuous Forward Current Power Dissipation of 240 mW with Minimum Trace 1 2 Very High Switching Speed CATHODE ANODE Low Capacitance CT = 7 pF NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 MARKING Qualified and PPAP Capable 2 DIAGRAM This is a PbFree Device 1 Typical Applications M SOD923 CASE 514AB 12 LCD and Keypad Backlighting Camera Photo Flash P = Specific Device Code Buck and Boost dcdc Converters M = Month Code Reverse Voltage and Current Protection Clamping & Protection ORDERING INFORMATION Markets Device Package Shipping Mobile Handsets NSR0240P2T5G SOD923 8000 / Tape & Reel MP3 Players (PbFree) Digital Camera and Camcorders Notebook PCs & PDAs NSVR0240P2T5G SOD923 8000 / Tape & Reel (PbFree) GPS For information on tape and reel specifications, MAXIMUM RATINGS including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Rating Symbol Value Unit Brochure, BRD8011/D. Reverse Voltage V 40 V R Forward Current (DC) I 200 mA F NonRepetitive Peak Forward Surge Current I 2.0 A FSM ESD Rating: Human Body Model ESD Class 1C Machine Model Class A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: September, 2019 Rev. 4 NSR0240P2/D PNSR0240P2 THERMAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 520 C/W JA Total Power Dissipation T = 25C P 240 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 175 C/W JA Total Power Dissipation T = 25C P 710 mW A D Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. Mounted onto a 4 in square FR4 board 10 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR 4 board 1 in sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I A R (V = 25 V) 0.2 0.55 R (V = 40 V) 0.8 5.0 R Forward Voltage (I = 10 mA) V 0.34 0.365 V F F (I = 100 mA) 0.46 0.50 F (I = 200 mA) 0.54 0.60 F Total Capacitance 7.0 pF CT (V = 1.0 V, f = 1 MHz) R 1000 1.0E02 150C 1.0E03 100 1.0E04 85C 125C 125C 10 1.0E05 75C 150C 1 1.0E06 25C 1.0E07 0.1 1.0E08 40C 0.01 1.0E09 85C 25C 40C 0.001 1.0E10 0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30 35 40 45 V , FORWARD VOLTAGE (V) V , REVERSE VOLTAGE (V) F R Figure 1. Forward Voltage Figure 2. Leakage Current 14 12 T = 25C A 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 V , REVERSE VOLTAGE (V) R Figure 3. Total Capacitance www.onsemi.com 2 I , FORWARD CURRENT (mA) F C , TOTAL CAPACITANCE (pF) T I , REVERSE CURRENT (A) r