NSVMMBD717LT1G ON Semiconductor

MMBD717LT1G Common Anode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount MMBD717LT1G 820 +10 V 2 k 0.1 F I F t t t r p I F 100 H t t 10% 0.1 F rr DUT 90% 50 OUTPUT 50 INPUT i = 1 mA PULSE SAMPLING R(REC) I R GENERATOR OSCILLOSCOPE V R OUTPUT PULSE INPUT SIGNAL (I = I = 10 mA measured F R at i = 1 mA) R(REC) NOTES: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit 10 100 T = 150C A 10 125C 1.0 85C 1.0 0.1 1 50C 0.01 25C 1 25C 85C 25C - 40C - 55C 0.1 0.001 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 V , FORWARD VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) F R Figure 2. Typical Forward Voltage Figure 3. Reverse Current versus Reverse Voltage 3.0 2.5 2.0 1.5 1.0 0.5 0 0 2.0 4.0 6.0 8.0 10 12 14 16 18 V , REVERSE VOLTAGE (VOLTS) R Figure 4. Typical Capacitance