MMBT5401M3 High Voltage Transistor PNP Silicon The MMBT5401M3 device is a spinoff of our popular SOT23 threeleaded device. It is designed for general purpose amplifier applications and is housed in the SOT723 surface mount package. www.onsemi.com This device is ideal for lowpower surface mount applications where board space is at a premium. Features SOT723 NSV Prefix for Automotive and Other Applications Requiring CASE 631AA Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable COLLECTOR These Devices are PbFree, Halogen Free/BFR Free and are RoHS 3 Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 Collector Emitter Voltage V 150 Vdc CEO EMITTER Collector Base Voltage V 160 Vdc CBO Emitter Base Voltage V 5.0 Vdc EBO MARKING DIAGRAM Collector Current Continuous I 60 mAdc C Stresses exceeding those listed in the Maximum Ratings table may damage RJ M the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 THERMAL CHARACTERISTICS RJ = Specific Device Code M = Date Code Characteristic Symbol Max Unit Total Device Dissipation P 130 mW D FR5 Board (Note 1) T = 25C A Derate Above 25C 1.0 mW/C ORDERING INFORMATION Thermal Resistance, R 470 C/W JA Device Package Shipping JunctiontoAmbient (Note 1) MMBT5401M3T5G SOT723 8000 / Tape & Junction and Storage Temperature T , T 55 to +150 C J stg (PbFree) Reel 2 1. FR5 100 mm , 1.0 oz. copper traces, still air. NSVMMBT5401M3T5G 8000 / Tape & SOT723 Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: June, 2019 Rev. 1 MMBT5401M3/DMMBT5401M3 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V V (BR)CEO (I = 1.0 mA, I = 0) 150 C B Collector Base Breakdown Voltage V V (BR)CBO (I = 100 A, I = 0) 160 C E Emitter Base Breakdown Voltage V V (BR)EBO (I = 10 A, I = 0) 5.0 E C CollectorBase Cutoff Current I CBO (V = 120 V, I = 0) 1.6 100 nA CB E Emitter Cutoff Current I EBO (V = 5 V) 0.20 100 nA BE ON CHARACTERISTICS DC Current Gain h FE (I = 1.0 mA, V = 5.0 V) 50 80 C CE (I = 10 mA, V = 5.0 V) 60 90 240 C CE (I = 50 mA, V = 5.0 V) 20 40 C CE Collector Emitter Saturation Voltage V V CE(sat) (I = 10 mA, I = 1.0 mA) 0.09 0.25 C B (I = 50 mA, I = 5.0 mA) 0.15 0.60 C B Base Emitter Saturation Voltage V V BE(sat) (I = 10 mA, I = 1.0 mA) 0.76 1.0 C B (I = 50 mA, I = 5.0 mA) 0.92 1.0 C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f MHz T (I = 10 mA, V = 5.0 V, f = 100 MHz) 100 180 300 C CE Input Capacitance C pF ibo (V = 3 V, I = 0, f = 1.0 MHz) 12.5 15 EB C Output Capacitance C pF obo (V = 10 V, I = 0, f = 1.0 MHz) 1.5 6.0 CB E Small Signal Current Gain h fe (I = 1.0 mA, V = 10 V, f = 1.0 kHz) 40 200 C CE Noise Figure NF dB (I = 200 A, V = 5.0 V, R = 10 , f = 1.0 kHz) 8.0 C CE S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2