MMBT5087L Low Noise Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable COLLECTOR 3 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER CollectorEmitter Voltage V 50 Vdc CEO CollectorBase Voltage V 50 Vdc CBO 3 EmitterBase Voltage V 3.0 Vdc EBO SOT23 (TO236) CASE 318 Collector Current Continuous I 50 mAdc 1 C STYLE 6 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board, P D (Note 1) T = 25C 225 mW MARKING DIAGRAM A Derate above 25C 1.8 mW/C Thermal Resistance, JunctiontoAmbient R 556 C/W JA 2Q M Total Device Dissipation Alumina P D Substrate, (Note 2) T = 25C 300 mW A Derate above 25C 2.4 mW/C 1 Thermal Resistance, JunctiontoAmbient R 417 C/W JA 2Q = Device Code M = Date Code* Junction and Storage Temperature T , T 55 to +150 C J stg = PbFree Package Stresses exceeding those listed in the Maximum Ratings table may damage the (Note: Microdot may be in either location) device. If any of these limits are exceeded, device functionality should not be *Date Code orientation and/or overbar may assumed, damage may occur and reliability may be affected. vary depending upon manufacturing location. 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. ORDERING INFORMATION Device Package Shipping MMBT5087LT1G, SOT23 3,000 / Tape & NSVMMBT5087LT1G (PbFree) Reel MMBT5087LT3G, SOT23 10,000 / Tape & NSVMMBT5087LT3G (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 6 MMBT5087LT1/DMMBT5087L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V 50 Vdc (BR)CEO (I = 1.0 mAdc, I = 0) C B CollectorBase Breakdown Voltage V 50 Vdc (BR)CBO (I = 100 Adc, I = 0) C E Collector Cutoff Current I nAdc CBO (V = 10 Vdc, I = 0) 10 CB E (V = 35 Vdc, I = 0) 50 CB E ON CHARACTERISTICS DC Current Gain h FE (I = 100 Adc, V = 5.0 Vdc) 250 800 C CE 250 (I = 1.0 mAdc, V = 5.0 Vdc) C CE (I = 10 mAdc, V = 5.0 Vdc) 250 C CE CollectorEmitter Saturation Voltage V 0.3 Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) C B BaseEmitter Saturation Voltage V 0.85 Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f 40 MHz T (I = 500 Adc, V = 5.0 Vdc, f = 20 MHz) C CE Output Capacitance C 4.0 pF obo (V = 5.0 Vdc, I = 0, f = 1.0 MHz) CB E SmallSignal Current Gain h 250 900 fe (I = 1.0 mAdc, V = 5.0 Vdc, f = 1.0 kHz) C CE Noise Figure NF dB (I = 20 mAdc, V = 5.0 Vdc, R = 10 k , f = 1.0 kHz) 2.0 C CE S (I = 100 Adc, V = 5.0 Vdc, R = 3.0 k , f = 1.0 kHz) 2.0 C CE S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. TYPICAL NOISE CHARACTERISTICS (V = 5.0 Vdc, T = 25C) CE A 10 1.0 BANDWIDTH = 1.0 Hz 7.0 BANDWIDTH = 1.0 Hz R 0 7.0 S 5.0 R S I = 1.0 mA I = 10 A C 3.0 C 5.0 2.0 300 A 30 A 1.0 3.0 100 A 0.7 100 A 0.5 300 A 1.0 mA 2.0 0.3 30 A 0.2 10 A 1.0 0.1 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k f, FREQUENCY (Hz) f, FREQUENCY (Hz) Figure 1. Noise Voltage Figure 2. Noise Current www.onsemi.com 2 e , NOISE VOLTAGE (nV) n I , NOISE CURRENT (pA) n