MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SOT416/SC75 package which is designed for low power surface mount applications. COLLECTOR 3 Features NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirements AEC-Q101 Qualified BASE and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS 2 EMITTER Compliant 3 CASE 463 SOT416/SC75 MAXIMUM RATINGS (T = 25C) 2 A STYLE 1 1 Rating Symbol Max Unit CollectorEmitter Voltage V 40 Vdc CEO MARKING DIAGRAM CollectorBase Voltage V 75 Vdc CBO EmitterBase Voltage V 6.0 Vdc EBO Collector Current Continuous I 600 mAdc 1P M C THERMAL CHARACTERISTICS 1 Characteristic Symbol Max Unit 1P = Specific Device Code Total Device Dissipation (Note 1) P 150 mW D M = Date Code T = 25C A = PbFree Package Thermal Resistance, R 833 C/W JA (Note: Microdot may be in either location) JunctiontoAmbient Operating and Storage Junction T , T 55 to +150 C J stg Temperature Range ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be Device Package Shipping assumed, damage may occur and reliability may be affected. 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum MMBT2222ATT1G SOT416 3000 / Tape & recommended footprint. (PbFree) Reel NSVMMBT2222ATT1G SOT416 3000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: July, 2018 Rev. 6 MMBT2222ATT1/DMMBT2222ATT1G, NSVMMBT2222ATT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 1) V 40 Vdc (BR)CEO (I = 10 mAdc, I = 0) C B CollectorBase Breakdown Voltage V 75 Vdc (BR)CBO (I = 10 Adc, I = 0) C E EmitterBase Breakdown Voltage V 6.0 Vdc (BR)EBO (I = 10 Adc, I = 0) E C Base Cutoff Current I 20 nAdc BL (V = 60 Vdc, V = 3.0 Vdc) CE EB Collector Cutoff Current I 10 nAdc CEX (V = 60 Vdc, V = 3.0 Vdc) CE EB ON CHARACTERISTICS (Note 2) DC Current Gain H FE (I = 0.1 mAdc, V = 10 Vdc) 35 C CE (I = 1.0 mAdc, V = 10 Vdc) 50 C CE (I = 10 mAdc, V = 10 Vdc) 75 C CE (I = 150 mAdc, V = 10 Vdc) 100 C CE (I = 500 mAdc, V = 10 Vdc) 40 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 150 mAdc, I = 15 mAdc) 0.3 C B (I = 500 mAdc, I = 50 mAdc) 1.0 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 150 mAdc, I = 15 mAdc) 0.6 1.2 C B (I = 500 mAdc, I = 50 mAdc) 2.0 C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f 300 MHz T (I = 20 mAdc, V = 20 Vdc, f = 100 MHz) C CE Output Capacitance C 8.0 pF obo (V = 10 Vdc, I = 0, f = 1.0 MHz) CB E Input Capacitance C 30 pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) EB C Input Impedance h 0.25 1.25 k ie (V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz) CE C 4 Voltage Feedback Ratio h 4.0 X 10 re (V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz) CE C SmallSignal Current Gain h 75 375 fe (V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz) CE C Output Admittance h 25 200 mhos oe (V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz) CE C Noise Figure NF 4.0 dB (V = 10 Vdc, I = 100 Adc, R = 1.0 k ohms, f = 1.0 kHz) CE C S SWITCHING CHARACTERISTICS Delay Time t 10 d (V = 3.0 Vdc, V = 0.5 Vdc, CC BE ns I = 150 mAdc, I = 15 mAdc) C B1 Rise Time t 25 r Storage Time t 225 s (V = 30 Vdc, I = 150 mAdc, CC C ns I = I = 15 mAdc) B1 B2 Fall Time t 60 f 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. www.onsemi.com 2