MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G www.onsemi.com Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications SOT23 (TO236) but are suitable also for use in detector and ultrafast switching CASE 318 circuits. 1 2 Features ANODE CATHODE 3 Very Low Capacitance Less Than 1.0 pF Zero V CATHODE/ANODE Low Forward Voltage 0.5 V (Typ) I = 10 mA MMBD352LT1G F STYLE 11 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 1 2 CATHODE ANODE Qualified and PPAP Capable 3 These Devices are PbFree, Halogen Free/BFR Free and are RoHS CATHODE/ANODE Compliant MMBD353LT1G NSVMMBD353LT1G STYLE 19 MAXIMUM RATINGS (EACH DIODE) 1 ANODE Rating Symbol Value Unit 3 2 ANODE Continuous Reverse Voltage V 7.0 V CATHODE R CC MMBD354LT1G Stresses exceeding those listed in the Maximum Ratings table may damage the NSVMMBD354LT1G device. If any of these limits are exceeded, device functionality should not be STYLE 9 assumed, damage may occur and reliability may be affected. 1 CATHODE THERMAL CHARACTERISTICS ANODE 3 2 CATHODE Characteristic Symbol Max Unit MMBD355LT1G Total Device Dissipation FR5 Board, P D STYLE 12 (Note 1) T = 25C 225 mW A Derate above 25C 1.8 mW/C MARKING DIAGRAM Thermal Resistance, JunctiontoAmbient R 556 C/W JA Total Device Dissipation Alumina P D Mxx M Substrate, (Note 2) T = 25C 300 mW A Derate above 25C 2.4 mW/C 1 Thermal Resistance, JunctiontoAmbient 417 C/W R JA Mxx = Device Code Junction and Storage Temperature T , T 55 to +150 C M = Date Code* J stg = PbFree Package 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 9 MMBD352LT1/DMMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (EACH DIODE) A Rating Symbol Min Max Unit Forward Voltage V V F (I = 10 mAdc) 0.60 F Reverse Leakage Current (Note 3) I A R (V = 3.0 V) 0.25 R (V = 7.0 V) 10 R Capacitance C pF (V = 0 V, f = 1.0 MHz) 1.0 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. For each individual diode while the second diode is unbiased. ORDERING INFORMATION Device Marking Package Shipping MMBD352LT1G SOT23 3,000 Units / Tape & Reel M5G (PbFree) MMBD352LT3G SOT23 10,000 Units / Tape & Reel M5G (PbFree) MMBD353LT1G SOT23 3,000 Units / Tape & Reel M4F (PbFree) NSVMMBD353LT1G SOT23 3,000 Units / Tape & Reel M4F (PbFree) MMBD353LT3G SOT23 10,000 Units / Tape & Reel M4F (PbFree) MMBD354LT1G SOT23 3,000 Units / Tape & Reel M6H (PbFree) NSVMMBD354LT1G SOT23 3,000 Units / Tape & Reel M6H (PbFree) MMBD355LT1G SOT23 3,000 Units / Tape & Reel MJ1 (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. TYPICAL CHARACTERISTICS 1.0 100 T = 85C A 0.9 10 T = -40C A 0.8 1.0 T = 25C A 0.7 0.1 0.6 0.3 0.4 0.5 0.6 0.7 0.8 0 1.0 2.0 3.0 4.0 V , FORWARD VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) F R Figure 1. Forward Voltage Figure 2. Capacitance www.onsemi.com 2 I , FORWARD CURRENT (mA) F C, CAPACITANCE (pF)