BAV19W-G, BAV20W-G, BAV21W-G www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES Silicon epitaxial planar diodes For general purpose AEC-Q101 qualified available (part number on request) Base P/N-G3 - green, commercial grade Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 click logo to get started DESIGN SUPPORT TOOLS Models Available MECHANICAL DATA Case: SOD-123 Weight: approx. 9.4 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE TYPE TYPE CIRCUIT PART ORDERING CODE REMARKS DIFFERENTIATION MARKING CONFIGURATION BAV19W-G V = 100 V BAV19W-G3-08 or BAV19W-G3-18 AS Single Tape and reel R BAV20W-G V = 150 V BAV20W-G3-08 or BAV20W-G3-18 AT Single Tape and reel R BAV21W-G V = 200 V BAV21W-G3-08 or BAV21W-G3-18 AU Single Tape and reel R ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BAV19W-G V 100 V R Continuous reverse voltage BAV20W-G V 150 V R BAV21W-G V 200 V R BAV19W-G V 120 V RRM Repetitive peak reverse voltage BAV20W-G V 200 V RRM BAV21W-G V 250 V RRM (1) DC forward current I 250 mA F Rectified current (average) half I 200 mA F(AV) (1) wave rectification with resist. load (1) Repetitive peak forward current f 50 Hz I 625 mA FRM Surge forward current t < 1 s I 1A FSM (1) Power dissipation P 410 mW tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 375 K/W thJA (1) Junction temperature T 150 C j (1) Storage temperature range T -65 to +150 C stg -55 to +150 C Operating temperature range T op Note (1) Valid provided that leads are kept at ambient temperature Rev. 1.4, 22-Feb-18 Document Number: 85188 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BAV19W-G, BAV20W-G, BAV21W-G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT I = 100 mA V 1V F F Forward voltage I = 200 mA V 1250 mV F F V = 100 V BAV19W-G I 100 nA R R V = 100 V, T = 100 C BAV19W-G I 15 A R j R V = 150 V BAV20W-G I 100 nA R R Leakage current V = 150 V, T = 100 C BAV20W-G I 15 A R j R V = 200 V BAV21W-G I 100 nA R R V = 200 V, T = 100 C BAV21W-G I 15 A R j R Dynamic forward resistance I = 10 mA r 5 F f Diode capacitance V = 0, f = 1 MHz C 1.5 pF R D I = 30 mA, I = 30 mA, F R Reverse recovery time t 50 ns rr i = 3 mA, R = 100 R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 600 1000 T = 100 C 500 j 100 400 10 25 C 300 1 200 0.1 100 0.01 0 0 20 40 60 80 100 120 140 0 0.2 0.4 0.6 0.8 1 18858 V - Forward Voltage (V) F T - Ambient Temperature (C) 21937 amb Fig. 1 - Forward Current vs. Forward Voltage Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 0.3 100 0.2 DC current I F 10 Current (rectif.) I O 0.1 0 1 1 10 100 0 30 60 90 120 150 18861 I - Forward Current (mA) 18859 T - Ambient Temperature (C) F amb Fig. 2 - Admissible Forward Current vs. Ambient Temperature Fig. 4 - Dynamic Forward Resistance vs. Forward Current Rev. 1.4, 22-Feb-18 Document Number: 85188 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I , I - Admissible Forward Current (A) I - Forward Current (mA) OF F P - Admissible Power Dissipation (mW) r - Dynamic Forward Resistance () tot f