BAS3010S02LRHE6327XTSA1 Infineon

BAS3010S-02LRH Low VF Schottky Diode Reverse voltage: 30 V Forward current: 1 A Low forward voltage and smallest package form factor (1.0 x 0.6 x < 4 mm) for mobile phone battery charger application Pb-free (RoHS compliant) package BAS3010S-02LRH 1 2 Type Package Configuration Marking BAS3010S-02LRH TSLP-2-17 single 1T Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit 1) 30 V Diode reverse voltage V R 1) 1 A Forward current , T 114 C I S F 4 Non-repetitive peak surge forward current I FSM (t 10 ms) p 150 C Junction temperature T j Operating temperature range T -55 ...150 op Storage temperature T -65 ...150 stg Thermal Resistance 2) K/W Junction - soldering point R 60 thJS 1 For T > 25 C the derating of V and I has to be considered A R F 2 For calculation of R please refer to Application Note Thermal Resistance thJA 2011-06-08 1BAS3010S-02LRH Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 1) Reverse current I A R V = 10 V - - 30 R V = 30 V - - 300 R 1) mV Forward voltage V F I = 1 mA - 200 250 F I = 100 mA - 340 390 F I = 700 mA - 500 570 F I = 1000 mA - 570 650 F AC Characteristics - 10 15 pF Diode capacitance C T V = 5 V, f = 1 MHz R 1 Pulsed test: t = 300 s D = 0.01 p 2011-06-08 2