MSS1P3, MSS1P4
www.vishay.com
Vishay General Semiconductor
Surface Mount Schottky Barrier Rectifiers
FEATURES
Available
Very low profile - typical height of 0.65 mm
eSMP Series
Ideal for automated placement
Low forward voltage drop, low power losses
High efficiency
Meets MSL level 1, per J-STD-020, LF
maximum peak of 260 C
Top View Bottom View
AEC-Q101 qualified available
MicroSMP
- Automotive ordering code: base P/NHM3
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I 1.0 A
F(AV)
MECHANICAL DATA
V 30 V, 40 V
RRM
Case: MicroSMP
I 25 A
FSM
Molding compound meets UL 94 V-0 flammability rating
V at I = 1.0 A 0.41 V
F F
Base P/N-M3 - halogen-free, RoHS-compliant, and
T max. 150 C
J commercial grade
Package MicroSMP Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Diode variations Single
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
TYPICAL APPLICATIONS
(_X denotes revision code e.g. A, B,...)
For use in low voltage high frequency inverters,
Terminals: Matte tin plated leads, solderable per
freewheeling, DC/DC converters, and polarity protection
J-STD-002 and JESD 22-B102
applications.
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL MSS1P3 MSS1P4 UNIT
Device marking code 13 14
Maximum repetitive peak reverse voltage V 30 40 V
RRM
Maximum average forward rectified current (fig. 1) I 1.0 A
F(AV)
Peak forward surge current 8.3 ms single half sine-wave
I 25 A
FSM
superimposed on rated load
Operating junction and storage temperature range T , T -55 to +150 C
J STG
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
I = 0.5 A 0.41 -
F
T = 25 C
J
I = 1.0 A 0.48 0.55
Maximum instantaneous F
(1)
V V
F
forward voltage
I = 0.5 A 0.32 -
F
T = 125 C
J
I = 1.0 A 0.41 0.46
F
T = 25 C 8.5 200 A
J
(2)
Maximum reverse current Rated V I
R R
T = 125 C 4.5 15 mA
J
Typical junction capacitance 4.0 V, 1 MHz C 50 - pF
J
Notes
(1)
Pulse test: 300 s pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Revision: 18-Dec-14 Document Number: 89019
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000MSS1P3, MSS1P4
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL MSS1P3MSS1P4UNIT
(1)
R 125
JA
(1)
Typical thermal resistance R 30 C/W
JL
(1)
R 40
JC
Note
(1)
Thermal resistance from junction to ambient and junction to lead mounted on PCB with 6.0 mm x 6.0 mm copper pad areas R is measured
JL
at the terminal of cathode band. R is measured at the top center of the body
JC
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
MSS1P4-M3/89A 0.006 89A 4500 7" diameter plastic tape and reel
(1)
MSS1P4HM3/89A 0.006 89A 4500 7" diameter plastic tape and reel
(1)
MSS1P4HM3_A/H 0.006 H 4500 7" diameter plastic tape and reel
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted)
A
1.2
10
Resistive or Inductive Load
1.0
T = 150 C
J
T = 125 C
0.8 1
J
0.6
T = 25 C
J
0.4 0.1
T Measured
L
0.2
at the Cathode Band Terminal
0.01
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0 25 50 75 100 125 150
Instantaneous Forward Voltage (V)
Lead Temperature (C)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics
0.6 100
D = 0.8
D = 0.5
D = 0.3
D = 0.2
0.5
T = 150 C
10 J
D = 0.1
0.4
D = 1.0
T = 125 C
1 J
0.3
0.1
T
0.2
0.01
0.1
D = t /T t
T = 25 C
p p
J
0 0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 10 20 30 40 50 60 70 80 90 100
Average Forward Current (A) Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Forward Power Loss Characteristics Fig. 4 - Typical Reverse Characteristics
Revision: 18-Dec-14 Document Number: 89019
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Average Power Loss (W) Average Forward Rectified Current (A)
Instantaneous Reverse Current (mA) Instantaneous Forward Current (A)