140 COMMERCE DRIVE MONTGOMERYVILLE, PA - PHONE: (215) 631 - FAX: (215) 631 - MS2361 FeaturesFeatures 80 WATTS (typ.) IFF 1030 DESCRIPTION:DESCRIPTION: ABSOLUTE MAXIMUABSOLUTE MAXIMUM RATINGS M RATINGS V Collector - Voltage V CBO V Collector - Voltage V CES V - Voltage V EBO I A C P Power Dissipation W DISS T Junction Temperature C J T - C STG Thermal DataThermal Data R Junction - TH(J - C) or contact our factory direct. WWW.ADVANCEDPOWER.COM Visit our website at Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein C/W 0.8 Thermal Resistance case 65 to +150 Storage Temperature +200 218.7 5.5 Device Current 3.5 Base Emitter 65 Emitter 65 Base Unit Value Parameter Symbol C) (Tcase = 25 broadband performance and a low thermal resistance. the 0.280 input matched stripline package resulting in improved cycles such as IFF, DME and TACAN. The MS2361 is packaged in r applications requiring high peak power and low duty designed fo The MS2361 is a gold metallized silicon, NPN power transistor INPUT MATCHED, COMMON BASE CONFIGURATION OPERATING CONDITIONS INFINITE LOAD VSWR CAPABILITY AT SPECIFIED RESISTANCE FOR RELIABILITY AND RUGGEDNESS NG AND LOW THERMAL EMITTER BALLASTI REFRACTORY GOLD METALLIZATION 7.6 dB MIN. GAIN 1215 MHz 50 WATTS (typ.) TACAN 960 1150 MHz 75 WATTS (min.) DME 1025 1090 MHz TACAN, APPLICATIONS DESIGNED FOR HIGH POWER PULSED IFF, DME, AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS 9855 9840 1013 18936 MS2361 ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25C)C) STATICSTATIC Test Conditions Typ. I I --- --- V CBO C E I V = 0V --- --- V CES C BE I I -- - --- V EBO C I V = 50V I --- --- 5 CES CE E h V = 5V I --- --- --- FE CE C DYNAMICDYNAMIC Test Conditions Typ. P - P V = 50V --- --- W OUT IN CE G - P V = 50V --- --- dB P IN CE Pulse Width = 10us, Duty Cycle = 1% Please contact the factory for specific application assistance. IMPEDANCE DATAIMPEDANCE DATA FREQ Z ( ) Z ( ) IN CL 2.5 + j 13.0 4.6 + j 5.5 5.2 + j 15.0 5.0 + j 5.5 16.3 + j 15.0 4.8 + j 5.5 14.7 + j 2.5 j 7.0 7.6 + j j 5.0 P = 13W IN V = 50V CC Pulse Width = 10uSec Duty Cycle = 1% or contact our factory direct. WWW.ADVANCEDPOWER.COM Visit our website at Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein 4.7 0.5 1215 MHz 4.7 1150 MHz 1090 MHz 1030 MHz 960 MHz This device is suitable for use under other pulse width/duty cycle conditions. Note: 7.6 = 13.0W 1150 MHz f =1025 75 = 13.0W 1150 MHz f =1025 Max. Min. Unit Symbol Value 10 = 100mA mA = 0mA E 3.5 = 0mA = 10mA BV 65 = 25mA BV 65 = 0mA = 10mA BV Max. Min. Unit Symbol Value