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X-On Electronics has gained recognition as a prominent supplier of BFG424F,115 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFG424F,115 RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFG424F,115 NXP

BFG424F,115 electronic component of NXP
BFG424F,115 NXP
BFG424F,115 RF Bipolar Transistors
BFG424F,115  Semiconductors

Images are for reference only
See Product Specifications
Part No. BFG424F,115
Manufacturer: NXP
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors NPN 25GHZ WIDEBAND
Datasheet: BFG424F,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2599 ea
Line Total: USD 0.26 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 08 Jan to Tue. 14 Jan
MOQ : 1
Multiples : 1
1 : USD 0.2599
10 : USD 0.1969
25 : USD 0.134
100 : USD 0.1054
250 : USD 0.09
500 : USD 0.0813

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BFG424F,115 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFG424F,115 and other electronic components in the RF Bipolar Transistors category and beyond.

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BFG424F NPN 25 GHz wideband transistor Rev. 2 13 September 2011 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Very high power gain Low noise figure High transition frequency Emitter is thermal lead Low feedback capacitance 1.3 Applications Radio Frequency (RF) front end wideband applications such as: analog and digital cellular telephones cordless telephones (Cordless Telephone (CT), Personal Handy-phone System (PHS), Digital Enhanced Cordless Telecommunications (DECT), etc.) radar detectors pagers Satellite Antenna TeleVison (SATV) tuners high frequency oscillators e.g. Dielectric Resonator Oscillator (DRO) for Low Noise Block (LNB) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage open emitter - - 10 V CBO V collector-emitter voltage open base - - 4.5 V CEO I collector current - 25 30 mA C 1 P total power dissipation T 90 C - - 135 mW tot spBFG424F NXP Semiconductors NPN 25 GHz wideband transistor Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit h DC current gain I =25mA V =2V 50 80 120 FE C CE T =25 C j C collector-base V = 2 V f = 1 MHz - 102 - fF CBS CB capacitance f transition frequency I =25mA V =2V -25 -GHz T C CE f= 2GHz T =25 C amb 2 G maximum power gain I =25mA V =2V -23 -dB p(max) C CE f= 2GHz T =25 C amb NF noise figure I =2mA V =2V -1.2 -dB C CE f= 2GHz = S opt 1 T is the temperature at the soldering point of the emitter pins. sp 2 G is the maximum power gain, if K > 1. If K < 1 then G = Maximum Stable Gain (MSG), see p(max) p(max) Figure 8. 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1emitter 4 34 2base 3emitter 2 4 collector 1, 3 mbb159 2 1 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFG424F - plastic surface mounted flat pack package reverse SOT343F pinning 4 leads 4. Marking Table 4. Marking 1 Type number Marking code BFG424F NE* 1 * = p: made in Hong Kong. BFG424F All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 13 September 2011 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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