BFG591,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor Product specification 1995 Sep 04 Supersedes data of November 1992NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEATURES DESCRIPTION lfpage 4 High power gain NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 package. Low noise figure High transition frequency PINNING Gold metallization ensures excellent reliability. PIN DESCRIPTION 1emitter APPLICATIONS 2base Intended for applications in the GHz 123 3emitter range such as MATV or CATV Top view MSB002 - 1 4 collector amplifiers and RF communications subscriber equipment. Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage open base 15 V CEO I collector current (DC) 200 mA C P total power dissipation up to T =80 C note 1 2W tot s h DC current gain I =70mA V =8V 60 90 250 FE C CE C feedback capacitance I =I =0 V =12V f=1MHz 0.7 pF re C c CE f transition frequency I =70mA V =12V f=1GHz 7 GHz T C CE G maximum unilateral power I =70mA V =12V 13 dB UM C CE gain f= 900MHz T =25 C amb 2 insertion power gain I =70mA V =12V 12 dB C CE s 21 f= 900MHz T =25 C amb Note 1. T is the temperature at the soldering point of the collector pin. s 1995 Sep 04 2