X-On Electronics has gained recognition as a prominent supplier of BFG591,115 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFG591,115 RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFG591,115 NXP

BFG591,115 electronic component of NXP
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Part No.BFG591,115
Manufacturer: NXP
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors NPN 15V 7GHZ
Datasheet: BFG591,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5733 ea
Line Total: USD 0.57 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5733
125 : USD 0.5557
750 : USD 0.5148

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
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We are delighted to provide the BFG591,115 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFG591,115 and other electronic components in the RF Bipolar Transistors category and beyond.

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DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor Product specification 1995 Sep 04 Supersedes data of November 1992NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEATURES DESCRIPTION lfpage 4 High power gain NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 package. Low noise figure High transition frequency PINNING Gold metallization ensures excellent reliability. PIN DESCRIPTION 1emitter APPLICATIONS 2base Intended for applications in the GHz 123 3emitter range such as MATV or CATV Top view MSB002 - 1 4 collector amplifiers and RF communications subscriber equipment. Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage open base 15 V CEO I collector current (DC) 200 mA C P total power dissipation up to T =80 C note 1 2W tot s h DC current gain I =70mA V =8V 60 90 250 FE C CE C feedback capacitance I =I =0 V =12V f=1MHz 0.7 pF re C c CE f transition frequency I =70mA V =12V f=1GHz 7 GHz T C CE G maximum unilateral power I =70mA V =12V 13 dB UM C CE gain f= 900MHz T =25 C amb 2 insertion power gain I =70mA V =12V 12 dB C CE s 21 f= 900MHz T =25 C amb Note 1. T is the temperature at the soldering point of the collector pin. s 1995 Sep 04 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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