X-On Electronics has gained recognition as a prominent supplier of BFQ19,115 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFQ19,115 RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFQ19,115 NXP

BFQ19,115 electronic component of NXP
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Part No.BFQ19,115
Manufacturer: NXP
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors NPN 15V 100mA 5.5GHZ
Datasheet: BFQ19,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4979 ea
Line Total: USD 0.5 
Availability - 0
MOQ: 1  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1000
1 : USD 0.4979
125 : USD 0.478
750 : USD 0.4581
1500 : USD 0.4183
7500 : USD 0.3983

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BFQ19,115 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFQ19,115 and other electronic components in the RF Bipolar Transistors category and beyond.

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BFQ19 NPN 5 GHz wideband transistor Rev. 03 28 September 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication NPN 5 GHz wideband transistor BFQ19 DESCRIPTION PINNING NPN transistor in a SOT89 plastic PIN DESCRIPTION envelope intended for application in Code: FB thick and thin-film circuits. It is 1 emitter primarily intended for use in UHF and microwave amplifiers such as in aerial 2 collector amplifiers, radar systems, 3 base oscilloscopes, spectrum analysers etc. 321 The transistor features very low intermodulation distortion and high power gain. Due to its very high transition frequency, it also has Fig.1 SOT89. excellent wideband properties and low noise up to high frequencies. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V collector-emitter voltage open base - 15 V CEO I DC collector current - 100 mA C P total power dissipation up to T = 145 C (note 1) - 1W tot s f transition frequency I = 50 mA V = 10 V f = 500 MHz 5.5 - GHz T c CE T =25 C j C feedback capacitance I = 10 mA V = 10 V f = 1 MHz 1.3 - pF re c CE T =25 C amb F noise gure I = 50 mA V = 10 V Z = opt. 3.3 - dB c CE s f = 500 MHz T =25 C amb LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter - 20 V CBO V collector-emitter voltage open base - 15 V CEO V emitter-base voltage open collector - 3.3 V EBO I DC collector current - 100 mA C I peak collector current f > 1 MHz - 150 mA CM P total power dissipation up to T = 145 C (note 1) - 1W tot s T storage temperature - 65 150 C stg T junction temperature - 175 C j Note 1. T is the temperature at the soldering point of the collector tab. s Rev. 03 - 28 September 2007 2 of 7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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