X-On Electronics has gained recognition as a prominent supplier of BFR106E6327HTSA1 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFR106E6327HTSA1 RF Bipolar Transistors are a product manufactured by Infineon. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFR106E6327HTSA1 Infineon

BFR106E6327HTSA1 electronic component of Infineon
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See Product Specifications
Part No.BFR106E6327HTSA1
Manufacturer: Infineon
Category: RF Bipolar Transistors
Description: Infineon Technologies RF Bipolar Transistors NPN Silicon RF TRANSISTOR
Datasheet: BFR106E6327HTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2921 ea
Line Total: USD 0.29 
Availability - 73715
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
73715
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2921
10 : USD 0.1771
100 : USD 0.1299
1000 : USD 0.1277
3000 : USD 0.115
9000 : USD 0.1104
24000 : USD 0.1104
45000 : USD 0.1069
99000 : USD 0.1046

138
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 63
Multiples : 1
63 : USD 0.1223

13823
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 276
Multiples : 1
276 : USD 0.1477
500 : USD 0.1473
1000 : USD 0.1438
6000 : USD 0.1436
12000 : USD 0.1434

37830
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.1347
6000 : USD 0.1334
9000 : USD 0.1238
15000 : USD 0.1223
21000 : USD 0.1213
24000 : USD 0.12
30000 : USD 0.1079
45000 : USD 0.107
75000 : USD 0.1058
99000 : USD 0.1049

   
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We are delighted to provide the BFR106E6327HTSA1 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFR106E6327HTSA1 and other electronic components in the RF Bipolar Transistors category and beyond.

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BFR106 Low Noise Silicon Bipolar RF Transistor High linearity low noise RF transistor 22 dBm OP1dB and 31 dBm OIP3 900 MHz, 8 V, 70 mA For UHF / VHF applications Driver for multistage amplifiers For linear broadband and antenna amplifiers Collector design supports 5 V supply voltage Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Marking Pin Configuration Package BFR106 R7s SOT23 1=B 2=E 3=C Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit V Collector-emitter voltage, V CEO T = 25C 16 A T = -55C 15 A 20 Collector-emitter voltage V CES 20 Collector-base voltage V CBO 3 Emitter-base voltage V EBO 210 mA Collector current I C 21 Base current I B 1) 700 mW Total power dissipation P tot T 76 C S 150 C Junction temperature T J Storage temperature T -55 ... 150 Stg Thermal Resistance Parameter Symbol Value Unit 2) 105 K/W Junction - soldering point R thJS 1 T is measured on the collector lead at the soldering point to the pcb S 2 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) hJS t 2013-11-21 1BFR106 Electrical Characteristics at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 15 - - V Collector-emitter breakdown voltage V (BR)CEO I = 1 mA, I = 0 C B A Collector-emitter cutoff current I CES V = 20 V, V = 0 - - 1 CE BE V = 10 V, V = 0 - 0.001 0.03 CE BE - 1 30 nA Collector-base cutoff current I CBO V = 10 V, I = 0 CB E - 1 30 Emitter-base cutoff current I EBO V = 2 V, I = 0 EB C 70 100 140 - DC current gain h FE I = 70 mA, V = 8 V, pulse measured C CE 2013-11-21 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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