BFQ540,115 NXP

BFQ540 NPN wideband transistor Rev. 04 25 September 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication NPN wideband transistor BFQ540 FEATURES DESCRIPTION High gain NPN wideband transistor in a SOT89 plastic package. High output voltage Low noise PINNING Gold metallization ensures excellent reliability PIN DESCRIPTION Low thermal resistance. 1 emitter 321 2 collector APPLICATIONS 3 base VHF, UHF and CATV amplifiers. Marking code: N4. Fig.1 SOT89. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter -- 20 V CBO V collector-emitter voltage R =0 -- 15 V CES BE V collector-base voltage open collector -- 2V EBO I collector current (DC) -- 120 mA C P total power dissipation T 60 C note 1 -- 1.2 W tot s h DC current gain I = 40 mA V =8V T =25 C 100 120 250 FE C CE j f transition frequency I = 40 mA V = 8 V f = 1 GHz - 9 - GHz T C CE T =25 C amb 2 insertion power gain I = 40 mA V =8V 12 13 - dB C CE s 21 f = 900 MHz T =25 C amb F noise gure I = 40 mA V =8V - 1.9 2.4 dB C CE f = 900 MHz = S opt Note 1. T is the temperature at the soldering point of the collector pin. s Rev. 04 - 25 September 2007 2 of 8