BFQ591,115 NXP

BFQ591 NPN 7 GHz wideband transistor Rev. 04 2 October 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication NPN 7 GHz wideband transistor BFQ591 FEATURES PINNING High power gain PIN DESCRIPTION Low noise figure 1 emitter High transition frequency 2 collector Gold metallization ensures excellent reliability. 3 base APPLICATIONS Intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscribers equipment. DESCRIPTION NPN wideband transistor in a SOT89 plastic package. 321 MARKING TYPE NUMBER MARKING CODE Fig.1 Simplified outline (SOT89). BFQ591 BCp QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter -- 20 V CBO V collector-emitter voltage open base -- 15 V CEO I collector current (DC) -- 200 mA C P total power dissipation T 90 C note 1 -- 2.25 W tot s h DC current gain I = 70 mA V=8V 6090250 FE C CE C feedback capacitance I = 0 V = 12 V f = 1 MHz - 0.8 - pF re C CB f transition frequency I = 70 mA V =12V - 7 - GHz T C CE f = 1 GHz G maximum unilateral power gain I = 70 mA V =12V - 11 - dB UM C CE f = 900 MHz T =25 C amb 2 s insertion power gain I = 70 mA V =12V - 10 - dB 21 C CE f = 900 MHz T =25 C amb Note 1. T is the temperature at the soldering point of the collector pin. s Rev. 04 - 2 October 2007 2 of 11