X-On Electronics has gained recognition as a prominent supplier of BFR505,215 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFR505,215 RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFR505,215 NXP

BFR505,215 electronic component of NXP
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See Product Specifications
Part No.BFR505,215
Manufacturer: NXP
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors NPN 15V 9GHZ
Datasheet: BFR505,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2209 ea
Line Total: USD 0.22

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 17 Jul to Tue. 23 Jul
MOQ : 1
Multiples : 1
1 : USD 0.2209
5 : USD 0.2197
50 : USD 0.2149
250 : USD 0.204
1000 : USD 0.1956
2500 : USD 0.1931

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BFR505,215 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFR505,215 and other electronic components in the RF Bipolar Transistors category and beyond.

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BFR505 NPN 9 GHz wideband transistor Rev. 4 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR505 is an NPN silicon planar epitaxial transistor, intended for applications in the RF front end in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV). The transistor is encapsulated in a plastic SOT23 envelope. 1.2 Features and benefits High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. 1.3 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base open emitter - - 20 V CBO voltage V collector-emitter R = 0 -- 15 V CES BE voltage DC collector -- 18 mA I C current 1 P total power up to T = 135 C -- 150mW tot s dissipation h DC current gain I = 5 mA V = 6 V 60 120 250 FE C CE C feedback I = i = 0 A V = 6 V f = 1 MHz - 0.3 - pF re C c CB capacitance transition frequency I = 5 mA V = 6 V f = 1 GHz - 9 - GHz f T C CE maximum unilateral I = 5 mA V = 6 V -17 -dB G UM C CE power gain T = 25 C f = 900 MHz amb I = 5 mA V = 6 V -10 -dB C CE T = 25 C f = 2 GHz amb 2 S insertion power I = 5 mA V = 6 V 13 14 - dB 21 C CE gain T = 25 C f = 900 MHz amb SOT23BFR505 NXP Semiconductors NPN 9 GHz wideband transistor Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit F noise figure = I = 1.25 mA V = 6 V -1.2 1.7 dB s opt C CE T = 25 C f = 900 MHz amb = I = 5 mA V = 6 V -1.6 2.1 dB s opt C CE T = 25 C f = 900 MHz amb = I = 1.25 mA V = 6 V -1.9 -dB s opt C CE T = 25 C f = 2 GHz amb 1 T is the temperature at the soldering point of the collector tab. s 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Symbol 1base 3 3 2emitter 3 collector 1 12 2 sym021 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFR505 - plastic surface mounted package 3 leads SOT23 4. Marking Table 4. Marking table 1 Type number Marking code BFR505 31* 1 * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. BFR505 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 7 September 2011 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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