BFR92A,215

BFR92A NPN 5 GHz wideband transistor Rev. 04 2 March 2009 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication NPN 5 GHz wideband transistor BFR92A FEATURES DESCRIPTION High power gain NPN wideband transistor in a plastic page 3 SOT23 package. Low noise figure PNP complement: BFT92. Low intermodulation distortion. 12 PINNING APPLICATIONS Top view MSB003 PIN DESCRIPTION RF wideband amplifiers and Marking code: P2%. oscillators. 1 base 2 emitter Fig.1 SOT23. 3 collector QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V collector-base voltage - 20 V CBO V collector-emitter voltage - 15 V CEO I collector current (DC) - 25 mA C P total power dissipation T 95 C - 300 mW tot s C feedback capacitance I =i = 0 V = 10 V f = 1 MHz 0.35 - pF re C c CE f transition frequency I = 15 mA V = 10 V f = 500 MHz 5 - GHz T C CE G maximum unilateral power gain I = 15 mA V = 10 V f = 1 GHz 14 - dB UM C CE T =25 C amb I = 15 mA V = 10 V f = 2 GHz 8 - dB C CE T =25 C amb F noise gure I = 5 mA V = 10 V f = 1 GHz 2.1 - dB C CE = T =25 C s opt amb V output voltage d = - 60 dB I = 14 mA V =10V 150 - mV O im C CE R =75 f +f - f = 793.25 MHz L p q r LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter - 20 V CBO V collector-emitter voltage open base - 15 V CEO V emitter-base voltage open collector - 2V EBO I collector current (DC) - 25 mA C P total power dissipation T 95 C note 1 see Fig.3 - 300 mW tot s T storage temperature - 65 +150 C stg T junction temperature - 175 C j Note 1. T is the temperature at the soldering point of the collector pin. s Rev. 04 - 2 March 2009 2 of 12