BFR92AW,115 NXP

BFR92AW NPN 5 GHz wideband transistor Rev. 03 12 March 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication NPN 5 GHz wideband transistor BFR92AW FEATURES DESCRIPTION handbook, 2 columns 3 High power gain Silicon NPN transistor encapsulated in a plastic SOT323 (S-mini) package. Gold metallization ensures The BFR92AW uses the same crystal excellent reliability as the SOT23 version, BFR92A. SOT323 (S-mini) package. PINNING 12 APPLICATIONS PIN DESCRIPTION MBC870 It is designed for use in RF amplifiers, Top view mixers and oscillators with signal 1 base Marking code: P2. frequencies up to 1 GHz. 2 emitter Fig.1 SOT323 3 collector QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter -- 20 V CBO V collector-emitter voltage open base -- 15 V CEO I collector current (DC) -- 25 mA C P total power dissipation up to T =93 C note 1 -- 300 mW tot s h current gain I = 15 mA V =10V 65 90 135 FE C CE C feedback capacitance I = 0 V = 10 V f = 1 MHz - 0.35 - pF re C CE T =25 C amb f transition frequency I = 15 mA V = 10 V f = 500 MHz 3.5 5 - GHz T C CE G maximum unilateral power I = 15 mA V = 10 V f = 1 GHz - 14 - dB UM C CE gain T =25 C amb I = 15 mA V = 10 V f = 2 GHz - 8 - dB C CE T =25 C amb F noise gure I = 5 mA V = 10 V f = 1 GHz - 2 - dB C CE = s opt T junction temperature -- 150 C j Note 1. T is the temperature at the soldering point of the collector pin. s Rev. 03 - 12 March 2008 2 of 13