BFU730F,115 NXP

BFU730F NPN wideband silicon germanium RF transistor Rev. 1 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits Low noise high gain microwave transistor Noise figure (NF) = 0.8 dB at 5.8 GHz High maximum power gain 18.5 dB at 5.8 GHz 110 GHz f silicon germanium technology T 1.3 Applications 2nd LNA stage and mixer stage in DBS LNBs Low noise amplifiers for microwave communications systems Ka band oscillators DROs Low current battery equipped applications Microwave driver / buffer applications Wi-Fi / WLAN / WiMAX GPS RKE AMR ZigBee LTE, cellular, UMTS SDARS first stage LNA FM radio Mobile TV BluetoothBFU730F NXP Semiconductors NPN wideband silicon germanium RF transistor 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage open emitter - - 10 V CBO V collector-emitter voltage open base - - 2.8 V CEO V emitter-base voltage open collector - - 1.0 V EBO I collector current - 5 30 mA C 1 P total power dissipation T 90 C - - 197 mW tot sp h DC current gain I =2mA V =2V 205 380 555 FE C CE T =25 C j C collector-base V =2V f=1MHz - 55 - fF CBS CB capacitance f transition frequency I =25mA V =2V -55 - GHz T C CE f= 2GHz T =25 C amb 2 G maximum power gain I =17mA V =2V - 12.5 - dB p(max) C CE f = 12 GHz T =25 C amb NF noise figure I =5mA V =2V -1.30 - dB C CE f = 12 GHz = S opt P output power at 1 dB I =15mA V =2.5 V - 12.5 - dBm L(1dB) C CE gain compression Z =Z =50 S L f= 5.8GHz T =25 C amb 1 T is the temperature at the solder point of the emitter lead. sp 2 G is the maximum power gain, if K > 1. If K < 1 then G = Maximum Stable Gain (MSG). p(max) p(max) 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1emitter 34 4 2base 3emitter 2 4 collector 1, 3 2 1 mbb159 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFU730F - plastic surface-mounted flat pack package reverse SOT343F pinning 4 leads BFU730F All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 29 April 2011 2 of 12