X-On Electronics has gained recognition as a prominent supplier of BFG198,115 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFG198,115 RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFG198,115 NXP

BFG198,115 electronic component of NXP
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Part No.BFG198,115
Manufacturer: NXP
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors TAPE-7 TNS-RFSS
Datasheet: BFG198,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.1932 ea
Line Total: USD 1.19 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 1.1932
5 : USD 1.0468
20 : USD 0.8125
50 : USD 0.6903
100 : USD 0.5951

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BFG198,115 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFG198,115 and other electronic components in the RF Bipolar Transistors category and beyond.

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DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12NXP Semiconductors Product specification NPN 8 GHz wideband transistor BFG198 DESCRIPTION PINNING NPN planar epitaxial transistor in a PIN DESCRIPTION plastic SOT223 envelope, intended fpage 4 1emitter for wideband amplifier applications. 2base The device features a high gain and excellent output voltage capabilities. 3emitter 4 collector 123 MSB002 - 1 Top view Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage open base 10 V CEO I DC collector current 100 mA C P total power dissipation up to T =135 C (note 1) 1W tot s h DC current gain I =50mA V =5V T =25 C40 90 FE C CE j f transition frequency I =50mA V =8V f= 1GHz 8 GHz T C CE T =25 C amb G maximum unilateral power I =50mA V = 8 V f = 500 MHz 18 dB UM C CE gain T =25 C amb I =50mA V = 8 V f = 800 MHz 15 dB C CE T =25 C amb V output voltage d = 60 dB I =70mA V =8V 700 mV o im C CE R =75 T =25 C L amb f =793.25MHz (p+qr) LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage open base 10 V CEO V emitter-base voltage open collector 2.5 V EBO I DC collector current 100 mA C P total power dissipation up to T =135 C (note 1) 1W tot s T storage temperature 65 +150 C stg T junction temperature 175 C j Note 1. T is the temperature at the soldering point of the collector tab. s 1995 Sep 12 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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