BFG520W/X,115 NXP

BFG520W BFG520W/X NPN 9 GHz wideband transistors Rev. 04 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication NPN 9 GHz wideband transistors BFG520W BFG520W/X FEATURES PINNING High power gain DESCRIPTION PIN Low noise figure BFG520W BFG520W/X High transition frequency 1 collector collector Gold metallization ensures excellent reliability. 2 base emitter 3 emitter base APPLICATIONS 4 emitter emitter RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV) and repeater amplifiers in fibre-optic systems. handbook, halfpage 4 3 DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. 1 2 Top view MBK523 MARKING TYPE NUMBER CODE BFG520W N3 Fig.1 Simplified outline SOT343N. BFG520W/X N4 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter -- 20 V CBO V collector-emitter voltage R =0 -- 15 V CES BE I collector current (DC) -- 70 mA C P total power dissipation T 85 C -- 500 mW tot s h DC current gain I = 20 mA V = 6 V 60 120 250 FE C CE C feedback capacitance I = 0 V = 6 V f = 1 MHz - 0.35 - pF re C CB f transition frequency I = 20 mA V = 6 V f = 1 GHz T =25 C - 9 - GHz T C CE amb G maximum unilateral I = 20 mA V = 6 V f = 900 MHz T =25 C - 17 - dB UM C CE amb power gain 2 S insertion power gain I = 20 mA V = 6 V f = 900 MHz T =25 C16 17 - dB 21 C CE amb F noise gure = I = 5 mA V = 6 V f = 900 MHz - 1.1 1.6 dB s opt C CE Rev. 04 - 21 November 2007 2 of 15