BFP196E6327HTSA1 Infineon

BFP196 Low Noise Silicon Bipolar RF Transistor For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA Power amplifier for DECT and PCN systems f = 7.5 GHz, NF = 1.3 dB at 900 MHz T min Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Marking Pin Configuration Package BFP196 RIs 1 = C 2 = E 3 = B 4 = E - - SOT143 Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit 12 V Collector-emitter voltage V CEO 20 Collector-emitter voltage V CES 20 Collector-base voltage V CBO 2 Emitter-base voltage V EBO 150 mA Collector current I C 15 Base current I B 1) 700 mW Total power dissipation P tot T 77C S 150 C Junction temperature T J Ambient temperature T -65 ... 150 A Storage temperature T -65 ... 150 Stg Thermal Resistance Parameter Symbol Value Unit 2) K/W Junction - soldering point R 105 thJS 1 T is measured on the collector lead at the soldering point to the pcb S 2 For the definition of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJS 1 2014-04-04BFP196 Electrical Characteristics at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 12 - - V Collector-emitter breakdown voltage V (BR)CEO I = 1 mA, I = 0 C B - - 100 A Collector-emitter cutoff current I CES V = 20 V, V = 0 CE BE - - 100 nA Collector-base cutoff current I CBO V = 10 V, I = 0 CB E - - 1 A Emitter-base cutoff current I EBO V = 1 V, I = 0 EB C 70 100 140 - DC current gain h FE I = 50 mA, V = 8 V, pulse measured C CE 2 2014-04-04