X-On Electronics has gained recognition as a prominent supplier of BFP405H6327XTSA1 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFP405H6327XTSA1 RF Bipolar Transistors are a product manufactured by Infineon. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFP405H6327XTSA1 Infineon

BFP405H6327XTSA1 electronic component of Infineon
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Part No.BFP405H6327XTSA1
Manufacturer: Infineon
Category: RF Bipolar Transistors
Description: Infineon Technologies RF Bipolar Transistors RF BIP TRANSISTOR
Datasheet: BFP405H6327XTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2558 ea
Line Total: USD 0.26 
Availability - 10
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
10
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2558
10 : USD 0.1321

1416
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3979
10 : USD 0.2426
100 : USD 0.1966
500 : USD 0.1851
1000 : USD 0.1794
3000 : USD 0.1622
9000 : USD 0.1576
24000 : USD 0.1576

2376
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 248
Multiples : 1
248 : USD 0.1642
2000 : USD 0.1625

   
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We are delighted to provide the BFP405H6327XTSA1 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFP405H6327XTSA1 and other electronic components in the RF Bipolar Transistors category and beyond.

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BFP405 Low Noise Silicon Bipolar RF Transistor For low current applications 3 For oscillators up to 12 GHz 2 4 Minimum noise figure NF = 1.25 dB at 1.8 GHz 1 min Outstanding G = 23 dB at 1.8 GHz ms Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Marking Pin Configuration Package BFP405 ALs 1=B 2=E 3=C 4=E - - SOT343 Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit V Collector-emitter voltage V CEO T = 25 C 4.5 A T = -55 C 4.1 A 15 Collector-emitter voltage V CES 15 Collector-base voltage V CBO 1.5 Emitter-base voltage V EBO 25 mA Collector current I C 3 Base current I B 1) 75 mW Total power dissipation P tot T 110 C S 150 C Junction temperature T J Ambient temperature T -65 ... 150 A Storage temperature T -65 ... 150 Stg 1 T is measured on the emitter lead at the soldering point to the pcb S 1 2013-09-19BFP405 Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 530 thJS Electrical Characteristics at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 4.5 5 - V Collector-emitter breakdown voltage V (BR)CEO I = 1 mA, I = 0 C B Collector-emitter cutoff current I - - 10 A CES V = 15 V, V = 0 CE BE - - 100 nA Collector-base cutoff current I CBO V = 5 V, I = 0 CB E - - 1 A Emitter-base cutoff current I EBO V = 0.5 V, I = 0 EB C 60 95 130 - DC current gain h FE I = 5 mA, V = 4 V, pulse measured C CE 1 For the definition of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJS 2 2013-09-19

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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