BFG520 BFG520/X BFG520/XR NPN 9 GHz wideband transistor Rev. 04 23 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication NPN 9 GHz wideband transistor BFG520 BFG520/X BFG520/XR FEATURES PINNING 4 3 fpage High power gain PIN DESCRIPTION Low noise figure BFG520 (Fig.1) Code: %MF High transition frequency 1 collector Gold metallization ensures 2 base 12 excellent reliability. Top view MSB014 3 emitter 4 emitter DESCRIPTION Fig.1 SOT143B. BFG520/X (Fig.1) Code: %ML NPN silicon planar epitaxial 1 collector transistors, intended for applications 2 emitter in the RF frontend in the GHz range, 3 base handbook, 2 columns such as analog and digital cellular 3 4 4 emitter telephones, cordless telephones (CT1, CT2, DECT, etc.), radar BFG520/XR (Fig.2) Code: %MP detectors, pagers and satellite TV 1 collector tuners (SATV) and repeater 2 1 2 emitter amplifiers in fibre-optic systems. 3 base Top view MSB035 The transistors are encapsulated in 4 emitter 4-pin, dual-emitter plastic SOT143 Fig.2 SOT143R. and SOT143R envelopes. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter -- 20 V CBO V collector-emitter voltage open base -- 15 V CEO I DC collector current -- 70 mA c P total power dissipation up to T =88 C note 1 -- 300 mW tot s h DC current gain I = 20 mA V = 6 V T =25 C 60 120 250 FE C CE j C feedback capacitance I = 0 V = 6 V f = 1 MHz - 0.3 - pF re C CB f transition frequency I = 20 mA V = 6 V f = 1 GHz - 9 - GHz T C CE T =25 C amb G maximum unilateral I = 20 mA V = 6 V f = 900 MHz - 19 - dB UM C CE power gain T =25 C amb I = 20 mA V = 6 V f = 2 GHz - 13 - dB C CE T =25 C amb 2 S insertion power gain I = 20 mA V = 6 V f = 900 MHz 17 18 - dB 21 C CE T =25 C amb F noise gure = I = 5 mA V =6V - 1.1 1.6 dB s opt c CE f = 900 MHz T =25 C amb = I = 20 mA V =6 V - 1.6 2.1 dB s opt C CE f = 900 MHz T =25 C amb = I = 5 mA V = 8 V - 1.9 - dB s opt C CE f = 2 GHz T =25 C amb Rev. 04 - 23 November 2007 2 of 14