X-On Electronics has gained recognition as a prominent supplier of BFG590/X RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFG590/X RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFG590/X NXP

BFG590/X electronic component of NXP
BFG590/X NXP
BFG590/X RF Bipolar Transistors
BFG590/X  Semiconductors

Images are for reference only
See Product Specifications
Part No. BFG590/X
Manufacturer: NXP
Category: RF Bipolar Transistors
Description: RF TRANSISTOR, NPN, SOT-143
Datasheet: BFG590/X Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.7639 ea
Line Total: USD 1.76 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 1
Multiples : 1
1 : USD 1.7639
10 : USD 1.1574
100 : USD 0.9243
500 : USD 0.8086
1000 : USD 0.7125
5000 : USD 0.6741

   
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Rf Transistor Case
No. Of Pins
Operating Temperature Max
Msl
Svhc
Continuous Collector Current Ic
Continuous Collector Current Ic Max
Current Ic Continuous A Max
Current Ic Hfe
Gain Bandwidth Ft Typ
Hfe Min
No. Of Transistors
Operating Temperature Min
Operating Temperature Range
Power Dissipation Ptot Max
Smd Marking
Termination Type
Transistor Case Style
Voltage Vcbo
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We are delighted to provide the BFG590/X from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFG590/X and other electronic components in the RF Bipolar Transistors category and beyond.

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BFG590 BFG590/X NPN 5 GHz wideband transistors Rev. 04 12 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication NPN 5 GHz wideband transistors BFG590 BFG590/X FEATURES PINNING High power gain DESCRIPTION PIN Low noise figure BFG590 BFG590/X High transition frequency 1 collector collector Gold metallization ensures excellent reliability. 2 base emitter 3 emitter base APPLICATIONS 4 emitter emitter MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range Ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive. handbook, 2 columns4 3 DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. 12 Top view MSB014 MARKING TYPE NUMBER CODE BFG590 %MH Fig.1 Simplified outline SOT143B. BFG590/X %MN QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter -- 20 V CBO V collector-emitter voltage open base -- 15 V CEO I collector current (DC) -- 200 mA C P total power dissipation T 60 C -- 400 mW tot s h DC current gain I = 35 mA V=8V 5090280 FE C CE C feedback capacitance I = 0 V =8V f=1MHz - 0.7 - pF re C CE f transition frequency I = 80 mA V =4V f=1GHz - 5 - GHz T C CE G maximum unilateral power gain I = 80 mA V =4V - 13 - dB UM C CE f = 900 MHz T =25 C amb 2 S insertion power gain I = 80 mA V =4V - 11 - dB 21 C CE f = 900 MHz T =25 C amb Rev. 04 - 12 November 2007 2 of 11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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