BFG67,215 NXP

BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Rev. 05 23 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR FEATURES PINNING High power gain DESCRIPTION PIN Low noise figure BFG67 BFG67/X BFG67/XR High transition frequency 1 collector collector collector Gold metallization ensures 2 base emitter emitter excellent reliability. 3 emitter base base 4 emitter emitter emitter APPLICATIONS Wideband applications in the GHz range, such as satellite TV tuners and portable RF communications equipment. DESCRIPTION NPN silicon transistor in a 4-pin, handbook, 2 columns4 3 handbook, 2 columns3 4 dual-emitter SOT143B plastic package. Available with in-line emitter pinning (BFG67) and cross emitter pinning (BFG67/X). Version with 2 1 12 reverse pinning (BFG67/XR) also available on request. Top view MSB014 Top view MSB035 MARKING TYPE NUMBER CODE BFG67 (Fig.1) V3% Fig.1 Simplified outline Fig.2 Simplified outline BFG67/X (Fig.1) %MV SOT143B. SOT143R. BFG67/XR (Fig.2) V26 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V collector-emitter voltage open base - 10 V CEO I collector current (DC) - 50 mA C P total power dissipation T 65 C - 300 mW tot s C feedback capacitance I =i = 0; V = 8 V; f = 1 MHz 0.5 - pF re C c CB f transition frequency I = 15 mA; V = 8 V; f = 500 MHz 8 - GHz T C CE G maximum unilateral power I = 15 mA; V =8V; 17 - dB UM C CE gain T =25 C; f = 1 GHz amb F noise gure = ; I = 5 mA; V =8V; 1.3 - dB s opt C CE T =25 C; f = 1 GHz amb = ; I = 5 mA; V =8V; 2.2 - dB s opt C CE T =25 C; f = 2 GHz amb Rev. 05 - 23 November 2007 2 of 14