X-On Electronics has gained recognition as a prominent supplier of BFP182WH6327XTSA1 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFP182WH6327XTSA1 RF Bipolar Transistors are a product manufactured by Infineon. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFP182WH6327XTSA1 Infineon

BFP182WH6327XTSA1 electronic component of Infineon
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Part No.BFP182WH6327XTSA1
Manufacturer: Infineon
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors RF BIP TRANSISTORS
Datasheet: BFP182WH6327XTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4147 ea
Line Total: USD 0.41 
Availability - 7212
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7212
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4147
10 : USD 0.2809
100 : USD 0.1349
1000 : USD 0.107
3000 : USD 0.078
9000 : USD 0.0736

8730
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 399
Multiples : 1
399 : USD 0.0988
500 : USD 0.0987
1000 : USD 0.0983

235710
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 9000
Multiples : 9000
9000 : USD 0.1085

5820
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.093
9000 : USD 0.0852

   
Manufacturer
Product Category
Technology
Transistor Polarity
Operating Frequency
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
Rohs Mouser
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BFP182WH6327XTSA1 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFP182WH6327XTSA1 and other electronic components in the RF Bipolar Transistors category and beyond.

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BFP182W Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA 2 4 1 f = 8 GHz, NF = 0.9 dB at 900 MHz T min Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Marking Pin Configuration Package BFP182W RGs 1=E 2=C 3=E 4 = B - - SOT343 Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit 12 V Collector-emitter voltage V CEO 20 Collector-emitter voltage V CES 20 Collector-base voltage V CBO 2 Emitter-base voltage V EBO 35 mA Collector current I C 4 Base current I B 1) 250 mW Total power dissipation P tot T 91 C S 150 C Junction temperature T J Storage temperature T -55 ... 150 Stg Thermal Resistance Parameter Symbol Value Unit 2) K/W Junction - soldering point R 235 thJS 1 T is measured on the collector lead at the soldering point to the pcb S 2 For the definition of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJS 1 2013-07-25BFP182W Electrical Characteristics at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 12 - - V Collector-emitter breakdown voltage V (BR)CEO I = 1 mA, I = 0 C B - - 100 A Collector-emitter cutoff current I CES V = 20 V, V = 0 CE BE - - 100 nA Collector-base cutoff current I CBO V = 10 V, I = 0 CB E - - 1 A Emitter-base cutoff current I EBO V = 1 V, I = 0 EB C 70 100 140 - DC current gain h FE I = 10 mA, V = 8 V, pulse measured C CE 2 2013-07-25

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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