X-On Electronics has gained recognition as a prominent supplier of BFG97,115 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFG97,115 RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFG97,115 NXP

BFG97,115 electronic component of NXP
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Part No.BFG97,115
Manufacturer: NXP
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors NPN 15V 5.5GHZ
Datasheet: BFG97,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7485 ea
Line Total: USD 0.75 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7485
10 : USD 0.7424
100 : USD 0.7182
250 : USD 0.6941

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
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We are delighted to provide the BFG97,115 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFG97,115 and other electronic components in the RF Bipolar Transistors category and beyond.

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DISCRETE SEMICONDUCTORS DATA SHEET BFG97 NPN 5 GHz wideband transistor Product specification September 1995NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 DESCRIPTION PINNING age 4 NPN planar epitaxial transistor PIN DESCRIPTION mounted in a plastic SOT223 1emitter envelope. 2 base It features excellent output voltage capabilities, and is primarily intended 3emitter for use in MATV applications. 4 collector PNP complement is the BFG31. 123 Top view MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage open base 15 V CEO I DC collector current 100 mA C P total power dissipation up to T =125 C (note 1) 1W tot s h DC current gain I =70 mA V =10 V T =25 C25 80 FE C CE j f transition frequency I =70 mA V =10 V 5.5 GHz T C CE f = 500 MHz T =25 C amb G maximum unilateral power gain I =70 mA V =10 V 16 dB UM C CE f = 500 MHz T =25 C amb I =70 mA V =10 V 12 dB C CE f = 800 MHz T =25 C amb V output voltage I =70 mA V =10 V 700 mV o C CE d 60 dB R =75 im = L f =793.25 MHz T =25 C (p q r) amb LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage open base 15 V CEO V emitter-base voltage open collector 3V EBO I DC collector current 100 mA C P total power dissipation up to T =125 C (note 1) 1W tot s T storage temperature 65 150 C stg T junction temperature 175 C j Note 1. T is the temperature at the soldering point of the collector tab. s September 1995 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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